2026: 논문·잡지·책

1.Adhesion between a borophane sheet and a metal substrate by interface bonding

• Kazuki Yamaguchi*1, Heming Yin*1, Masahito Niibe*1, Jingmin Tang*1*2, Masashige Miyamoto*1, Yuki Tsujikawa*1*3,
• Haruto Sakurai*1, Yu Murano*1, Kenichi Ozawa*4*5, Masafumi Horio*1,Jun-ichi Yamaura*1, Takahiro Kondo*6*7, Iwao Matsuda*1


• *1)Institute for Solid State Physics (ISSP), The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
• *2)International Center for Synchrotron Radiation Innovation Smart (SRIS), Tohoku University, Sendai, Miyagi 980-8572, Japan
• *3)Department of Chemistry, Keio University, Yokohama, Kanagawa 223-8522, Japan
• *4)Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK),Tsukuba, Ibaraki 305-0801, Japan
• *5)The Graduate University for Advanced Studies (SOKENDAI), Tsukuba, Ibaraki 305-0801, Japan
• *6)Tsukuba Institute for Advanced Research, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
• *7)Institute of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan


• Applied Surface Science Advances, 2026, 31: 100918. https://doi.org/10.1016/j.apsadv.2025.100918
• This is an open access article under the CC BY license.

2025: 논문·잡지·책

1.Synthesis and characterization of oxynitride glass films to develop a host for divalent-europium-centres

• Xun Liu*1, Takeo Ohsawa*1, Jian Xu*1, Masatoshi Yanagida*1, Kohsei Takahashi*1, Takashi Takeda*1, Tetsuo Kishi*3,
  Tetsuji Yano*3, Hiroyo Segawa*1*3, and Naoki Ohashi*1*2*4


• *1)National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
• *2)Interdisciplinary Graduate School of Engineering Sciences, Kyusyu University, 6-1, Kasugakoen, Kasuga, Fukuoka 816-8580, Japan
• *3)Department of Chemistry and Materials Science, Graduate School ofs Science and Engineering, Tokyo Institute of Technology,
  2-12 -1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
• *4)Materials DX Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama
  226-8503, Japan


• Journal of Materials Chemistry C, 2025, 13.35: 18286-18297. https://doi.org/10.1039/D5TC01527H

2.Reliable Operation in High-Mobility Indium Oxide Thin Film Transistors

• Prashant R. Ghediya*1, Yusaku Magari*1, Hikaru Sadahira*2, Takashi Endo*1, Mamoru Furuta*3, Yuqiao Zhang*4,
  Yasutaka Matsuo*1 & Hiromichi Ohta*1


• *1)Research Institute for Electronic Science, Hokkaido University, N20W10, Kita, Sapporo 001-0020, Japan
• *2Graduate School of Information Science and Technology, Hokkaido University, N20W10, Kita, Sapporo 001-0020, Japan
• *3)School of Environmental Science and Engineering, Kochi University of Technology, Kami, Kochi, 782-8502, Japan
• *4)Institute of Quantum and Sustainable Technology, Jiangsu University, Zhenjiang 212013, China


• Small Methods, 2025, 9.1: 2400578. DOI: 10.1002/smtd.202400578

3.Mechanochemical preparation of perovskite-type oxyhydrides BaLnO₂H (Ln = Tb-Lu) and their catalytic activity for ammonia synthesis

• Shun Sato*1, Masayoshi Miyazaki*1*2, Hideo Hosono*1*3, Masaaki Kitano*1*4


• *1)MDX Research Center for Element Strategy, Institute of Integrated Research, Institute of Science Tokyo, 4259 Nagatsuta,
  Midori-ku, Yokohama 226-8503, Japan.
• *2)Division of Applied Chemistry, Graduate School of Engineering, The University of Osaka, Suita 565-0871, Japan.
• *3)Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba,
  Ibaraki 305-0044, Japan.
• *4)Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai 980-8577, Japan.


• Dalton Transactions, 2025, 54.32: 12308-12315. DOI: 10.1039/d5dt01036e

4.Suppressing Hydrogen-related Trap States in indium–gallium–zinc oxide thin-film transistors for High-Mobility and Low-Power Oxide Electronics

• Ji-Min Park*1*2, SeongCheol Jang*1, Minju Song*3, Ki-Seok An*2, Youngho Kang*4, Junghwan Kim*5 & Hyun-Suk Kim*1


• *1)Department of Energy and Materials Engineering, Dongguk University, Seoul, 04620, Republic of Korea.
• *2)Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea.
• *3)Department of Materials Science and Engineering, UlsanNational Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
• *4)Department of Materials Science and Engineering, Incheon National University, Incheon, 22012, Republic of Korea.
• *5)Graduate School of Semiconductor Materials & Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.


• Communications Materials, 2025, 6.1: 280. DOI:10.1038/s43246-025-01003-x.
• This is an open access article under the CC BY-NC-ND 4.0 license.

5.Germanene Reformation from Oxidized Germanene on Ag (111)/Ge (111) by Vacuum Annealing

• Seiya Suzuki*1, Daiki Katsube*2, Masahiro Yano*1, Yasutaka Tsuda*3, Tomo-o Terasawa*1, Takahiro Ozawa*4, Katsuyuki Fukutani*4*1, Yousoo Kim*2, Hidehito Asaoka*1, Junji Yuhara*5, Akitaka Yoshigoe*3


• *1)Advanced Science Research Center (ASRC), Japan Atomic Energy Agency (JAEA), 2-4 Shirakata, Tokai-mura, Naka-gun, Ibaraki, 319-1195, Japan
• *2)Cluster for Pioneering Research, RIKEN, 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan
• *3)Materials Sciences Research Center, Japan Atomic Energy Agency (JAEA), 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo, 679–5148, Japan
• *4)Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8505, Japan
• *5)Department of Energy Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi, 464-8603, Japan


• Small Methods, 2025, 9.3: 2400863. https://doi.org/10.1002/smtd.202400863.
• This is an open access article under the CC BY 4.0 license.

6.Material-Mechanistic Interplay in SiCN Wafer Bonding for 3D Integration

• Hayato Kitagawa*1, Ryosuke Sato*1, Sodai Ebiko*1, Atsushi Nagata*2, Chiwoo Ahn*2, Yeounsoo Kim*3, Jiho Kang*3,
  Akira Uedono*4, Fumihiro Inoue*1


• *1)Yokohama National University, Yokohama 240-8501, Japan
• *2)Tokyo Electron Kyushu Limited, Kumamoto 861-1116, Japan
• *3)SK hynix Incorporation, Icheon 17336, Korea
• *4)University of Tsukuba, Tsukuba 305-8573, Japan


• ACS Omega, 2025, 10.25: 27575. doi: 10.1021/acsomega.5c03628.
• This is an open access article under the CC BY-NC-ND 4.0 license.

7.Oxygen Defects and Instability in Very Thin a-IGZO TFTs

• Hanjun Cho*1, Masatake Tsuji*1, Shigenori Ueda*2, Junghwan Kim*1*3, and Hideo Hosono*1*2


• *1)MDX Research Center for Element Strategy, Institute of IntegratedResearchInstitute of Science TokyoYokohama 226–8501, Japan
• *2)National Institute for Materials ScienceTsukuba, Ibaraki 305-0044, Japan
• *3)Graduate School of Semiconductor Materials and Devices EngineeringUlsan National Institute of Science and TechnologyUlsan 44919, Republic of Korea


• Advanced Electronic Materials, 2025, 11.15: e00349. https://doi.org/10.1002/aelm.202500349.
• This is an open access article under the CC BY 4.0 license.

8.Improved sensitivity in graphene-mediated surface-enhanced Raman scattering via H₂/Ar annealing

• Takashi Uchino*1, Yanjun Heng*1, Chao Tang*2*3, Shigenobu Kasai*1, Hirokazu Fukidome*2, Akira Satou*2, Shuji Ikeda*4,
  Taiichi Otsuji*2


• *1)Department of Electrical and Electronic and Engineering, Tohoku Institute of Technology, Sendai, Miyagi 982-8577, Japan
• *2)Research Institute of Electrical Communication, Tohoku University, Sendai, Miyagi 980-8577, Japan
• *3)Frontier Research Institute for Interdisciplinary Sciences, Tohoku University, Sendai, Miyagi 980-8578, Japan
• *4)tei Solutions Inc., Koganei, Tokyo 184-0015, Japan"


• Journal of Applied Physics, 2025, 138.17. https://doi.org/10.1063/5.0293913.
• This is an open access article under the CC BY 4.0 license.

9.Mechanochemical Synthesis of H–Materials: Hydrogen-Rich Perovskite Oxyhydrides with Lattice Strain as an Ammonia Synthesis Catalyst

• Fumitaka Takeiri*1*2, Norihiro Oshime*3, Shibghatullah Muhammady*1, Tasuku Uchimura*1, Hiroshi Yaguchi*1, Jun Haruyama*1, Akihiko Machida*3, Tetsu Watanuki*3, Takashi Saito*4, Kazuhiro Mori*4*5, Kenji Ohwada*3, Masaaki Kitano*6, Genki Kobayashi*1*7


• *1)Solid State Chemistry Laboratory, Cluster for Pioneering Research (CPR), RIKEN, Wako 351-0198, Japan.
• *2)Department of Chemistry, Kindai University, Osaka 577-8502, Japan.
• *3)Synchrotron Radiation Research Center, Kansai Institute for Photon Science, National Institutes for Quantum Science and Technology (QST), SPring-8, 1-1-1, Sayo-cho, Hyogo 679-5148, Japan.
• *4)Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tokai, Ibaraki 319-1106, Japan.
• *5)Institute of Quantum Beam Science, Graduate School of Science and Engineering, Ibaraki University, Tokai 319-1106, Japan.
• *6)MDX Research Center for Element Strategy, Institute of Integrated Research, Institute of Science Tokyo, Yokohama 226-8503, Japan.
• *7)Department of Chemistry, Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555, Japan.


• Journal of the American Chemical Society, 2025. DOI: 10.1021/jacs.5c04467.

10.Ultra‐High Mobility Atomically‐Ordered InGaZnO Transistors Through Atomic Layer Deposition

• Yoon-Seo Kim*1, Hyeon Woo Kim*1*2, Taewon Hwang*1, Jinho Ahn*1, Sung Beom Cho*3*4, and Jin-Seong Park*1


• *1)Division of Materials Science and EngineeringHanyang UniversitySeoul 04763, Republic of Korea
• *2)Nano Convergence Materials CenterKorea Institute of Ceramic Engineering and Technology (KICET)Jinju 52851, Republic of Korea
• *3)Department of Materials Science and EngineeringAjou UniversitySuwon 16499, Republic of Korea
• *4)Department of Energy Systems ResearchAjou UniversitySuwon 16499, Republic of Korea


• Advanced Electronic Materials, 2025, 11.15: e00137. https://doi.org/10.1002/aelm.202500137.
• This is an open access article under the CC BY 4.0 license.

11.Hydrogen embrittlement phenomena from incubation stage to fracture associated with strain-induced vacancy-hydrogen complexes in iron

• Yuri Sugiyama*1*2, Kenichi Takai*3


• *1)Graduate School of Science and Technology, Sophia University
• *2)Steel Research Laboratories, Nippon Steel Corporation
• *3)Department of Engineering and Applied Sciences, Faculty of Science and Technology, Sophia University"


• ISIJ International, 2025, ISIJINT-2024-384. https://doi.org/10.2355/isijinternational.ISIJINT-2024-384.
• This is an open access article under the CC BY-NC-ND 4.0 license.

12.Role of strain-induced dislocations and vacancy-type defects formed during the incubation period leading to hydrogen embrittlement of iron

• Y Sugiyama*1*2 and K Takai*3


• *1)Graduate School of Science and Technology, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan
• *2)Steel Research Laboratory, Nippon Steel Corporation, 20-1 Shintomi, Futtu, Chiba 293-8511, Japan
• *3)Department of Engineering and Applied Sciences, Faculty of Science and Technology, Sophia University, 7-1 Kioi-cho,
  Chiyoda-ku, Tokyo 102-8554, Japan


• Journal of Physics: Conference Series. IOP Publishing, 2025. p. 012008. DOI 10.1088/1742-6596/3035/1/012008.
• This is an open access article under the CC BY 4.0 license.

13.Effects of aging treatments on the annihilation and accumulation behavior of hydrogen-enhanced strain-induced vacancies formed in tempered martensitic steel

• K Nemoto*1, K Saito*1 and K Takai*2


• *1)Graduate School of Science and Technology, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan
• *2)Department of Engineering and Applied Sciences, Faculty of Science and Technology, Sophia University, 7-1 Kioi-cho,
  Chiyoda-ku, Tokyo 102-8554, Japan


• Journal of Physics: Conference Series. IOP Publishing, 2025. p. 012023. doi:10.1088/1742-6596/3035/1/012023.
• This is an open access article under the CC BY 4.0 license.