ESCO, Ltd.

＋81-422-55-1011
Contact Us
lang-j lang-j lang-j lang-j lang-e lang-e lang-k lang-k lang-c1 lang-c1 lang-c2 lang-c2

2025〜

2026: Papers, Journals, Books

1.Adhesion between a borophane sheet and a metal substrate by interface bonding

  • Kazuki Yamaguchi*1, Heming Yin*1, Masahito Niibe*1, Jingmin Tang*1*2, Masashige Miyamoto*1, Yuki Tsujikawa*1*3,
  • Haruto Sakurai*1, Yu Murano*1, Kenichi Ozawa*4*5, Masafumi Horio*1,Jun-ichi Yamaura*1, Takahiro Kondo*6*7, Iwao Matsuda*1

  • *1)Institute for Solid State Physics (ISSP), The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
  • *2)International Center for Synchrotron Radiation Innovation Smart (SRIS), Tohoku University, Sendai, Miyagi 980-8572, Japan
  • *3)Department of Chemistry, Keio University, Yokohama, Kanagawa 223-8522, Japan
  • *4)Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK),Tsukuba, Ibaraki 305-0801, Japan
  • *5)The Graduate University for Advanced Studies (SOKENDAI), Tsukuba, Ibaraki 305-0801, Japan
  • *6)Tsukuba Institute for Advanced Research, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
  • *7)Institute of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

  • Applied Surface Science Advances, 2026, 31: 100918. https://doi.org/10.1016/j.apsadv.2025.100918
  • This is an open access article under the CC BY license.

2025: Papers, Journals, Books

1.Synthesis and characterization of oxynitride glass films to develop a host for divalent-europium-centres

  • Xun Liu*1, Takeo Ohsawa*1, Jian Xu*1, Masatoshi Yanagida*1, Kohsei Takahashi*1, Takashi Takeda*1, Tetsuo Kishi*3,
    Tetsuji Yano*3, Hiroyo Segawa*1*3, and Naoki Ohashi*1*2*4

  • *1)National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
  • *2)Interdisciplinary Graduate School of Engineering Sciences, Kyusyu University, 6-1, Kasugakoen, Kasuga, Fukuoka 816-8580, Japan
  • *3)Department of Chemistry and Materials Science, Graduate School ofs Science and Engineering, Tokyo Institute of Technology,
    2-12 -1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
  • *4)Materials DX Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama
    226-8503, Japan

  • Journal of Materials Chemistry C, 2025, 13.35: 18286-18297. https://doi.org/10.1039/D5TC01527H

2.Reliable Operation in High-Mobility Indium Oxide Thin Film Transistors

  • Prashant R. Ghediya*1, Yusaku Magari*1, Hikaru Sadahira*2, Takashi Endo*1, Mamoru Furuta*3, Yuqiao Zhang*4,
    Yasutaka Matsuo*1 & Hiromichi Ohta*1

  • *1)Research Institute for Electronic Science, Hokkaido University, N20W10, Kita, Sapporo 001-0020, Japan
  • *2Graduate School of Information Science and Technology, Hokkaido University, N20W10, Kita, Sapporo 001-0020, Japan
  • *3)School of Environmental Science and Engineering, Kochi University of Technology, Kami, Kochi, 782-8502, Japan
  • *4)Institute of Quantum and Sustainable Technology, Jiangsu University, Zhenjiang 212013, China

  • Small Methods, 2025, 9.1: 2400578. DOI: 10.1002/smtd.202400578

3.Mechanochemical preparation of perovskite-type oxyhydrides BaLnO2H (Ln = Tb-Lu) and their catalytic activity for ammonia synthesis

  • Shun Sato*1, Masayoshi Miyazaki*1*2, Hideo Hosono*1*3, Masaaki Kitano*1*4

  • *1)MDX Research Center for Element Strategy, Institute of Integrated Research, Institute of Science Tokyo, 4259 Nagatsuta,
    Midori-ku, Yokohama 226-8503, Japan.
  • *2)Division of Applied Chemistry, Graduate School of Engineering, The University of Osaka, Suita 565-0871, Japan.
  • *3)Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba,
    Ibaraki 305-0044, Japan.
  • *4)Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai 980-8577, Japan.

  • Dalton Transactions, 2025, 54.32: 12308-12315. DOI: 10.1039/d5dt01036e

4.Suppressing Hydrogen-related Trap States in indium–gallium–zinc oxide thin-film transistors for High-Mobility and Low-Power Oxide Electronics

  • Ji-Min Park*1*2, SeongCheol Jang*1, Minju Song*3, Ki-Seok An*2, Youngho Kang*4, Junghwan Kim*5 & Hyun-Suk Kim*1

  • *1)Department of Energy and Materials Engineering, Dongguk University, Seoul, 04620, Republic of Korea.
  • *2)Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea.
  • *3)Department of Materials Science and Engineering, UlsanNational Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
  • *4)Department of Materials Science and Engineering, Incheon National University, Incheon, 22012, Republic of Korea.
  • *5)Graduate School of Semiconductor Materials & Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.

  • Communications Materials, 2025, 6.1: 280. DOI:10.1038/s43246-025-01003-x.
  • This is an open access article under the CC BY-NC-ND 4.0 license.

5.Germanene Reformation from Oxidized Germanene on Ag (111)/Ge (111) by Vacuum Annealing

  • Seiya Suzuki*1, Daiki Katsube*2, Masahiro Yano*1, Yasutaka Tsuda*3, Tomo-o Terasawa*1, Takahiro Ozawa*4, Katsuyuki Fukutani*4*1, Yousoo Kim*2, Hidehito Asaoka*1, Junji Yuhara*5, Akitaka Yoshigoe*3

  • *1)Advanced Science Research Center (ASRC), Japan Atomic Energy Agency (JAEA), 2-4 Shirakata, Tokai-mura, Naka-gun, Ibaraki, 319-1195, Japan
  • *2)Cluster for Pioneering Research, RIKEN, 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan
  • *3)Materials Sciences Research Center, Japan Atomic Energy Agency (JAEA), 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo, 679–5148, Japan
  • *4)Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8505, Japan
  • *5)Department of Energy Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi, 464-8603, Japan

  • Small Methods, 2025, 9.3: 2400863. https://doi.org/10.1002/smtd.202400863.
  • This is an open access article under the CC BY 4.0 license.

6.Material-Mechanistic Interplay in SiCN Wafer Bonding for 3D Integration

  • Hayato Kitagawa*1, Ryosuke Sato*1, Sodai Ebiko*1, Atsushi Nagata*2, Chiwoo Ahn*2, Yeounsoo Kim*3, Jiho Kang*3,
    Akira Uedono*4, Fumihiro Inoue*1

  • *1)Yokohama National University, Yokohama 240-8501, Japan
  • *2)Tokyo Electron Kyushu Limited, Kumamoto 861-1116, Japan
  • *3)SK hynix Incorporation, Icheon 17336, Korea
  • *4)University of Tsukuba, Tsukuba 305-8573, Japan

  • ACS Omega, 2025, 10.25: 27575. doi: 10.1021/acsomega.5c03628.
  • This is an open access article under the CC BY-NC-ND 4.0 license.

7.Oxygen Defects and Instability in Very Thin a-IGZO TFTs

  • Hanjun Cho*1, Masatake Tsuji*1, Shigenori Ueda*2, Junghwan Kim*1*3, and Hideo Hosono*1*2

  • *1)MDX Research Center for Element Strategy, Institute of IntegratedResearchInstitute of Science TokyoYokohama 226–8501, Japan
  • *2)National Institute for Materials ScienceTsukuba, Ibaraki 305-0044, Japan
  • *3)Graduate School of Semiconductor Materials and Devices EngineeringUlsan National Institute of Science and TechnologyUlsan 44919, Republic of Korea

  • Advanced Electronic Materials, 2025, 11.15: e00349. https://doi.org/10.1002/aelm.202500349.
  • This is an open access article under the CC BY 4.0 license.

8.Improved sensitivity in graphene-mediated surface-enhanced Raman scattering via H2/Ar annealing

  • Takashi Uchino*1, Yanjun Heng*1, Chao Tang*2*3, Shigenobu Kasai*1, Hirokazu Fukidome*2, Akira Satou*2, Shuji Ikeda*4,
    Taiichi Otsuji*2

  • *1)Department of Electrical and Electronic and Engineering, Tohoku Institute of Technology, Sendai, Miyagi 982-8577, Japan
  • *2)Research Institute of Electrical Communication, Tohoku University, Sendai, Miyagi 980-8577, Japan
  • *3)Frontier Research Institute for Interdisciplinary Sciences, Tohoku University, Sendai, Miyagi 980-8578, Japan
  • *4)tei Solutions Inc., Koganei, Tokyo 184-0015, Japan"

  • Journal of Applied Physics, 2025, 138.17. https://doi.org/10.1063/5.0293913.
  • This is an open access article under the CC BY 4.0 license.

9.Mechanochemical Synthesis of H–Materials: Hydrogen-Rich Perovskite Oxyhydrides with Lattice Strain as an Ammonia Synthesis Catalyst

  • Fumitaka Takeiri*1*2, Norihiro Oshime*3, Shibghatullah Muhammady*1, Tasuku Uchimura*1, Hiroshi Yaguchi*1, Jun Haruyama*1, Akihiko Machida*3, Tetsu Watanuki*3, Takashi Saito*4, Kazuhiro Mori*4*5, Kenji Ohwada*3, Masaaki Kitano*6, Genki Kobayashi*1*7

  • *1)Solid State Chemistry Laboratory, Cluster for Pioneering Research (CPR), RIKEN, Wako 351-0198, Japan.
  • *2)Department of Chemistry, Kindai University, Osaka 577-8502, Japan.
  • *3)Synchrotron Radiation Research Center, Kansai Institute for Photon Science, National Institutes for Quantum Science and Technology (QST), SPring-8, 1-1-1, Sayo-cho, Hyogo 679-5148, Japan.
  • *4)Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tokai, Ibaraki 319-1106, Japan.
  • *5)Institute of Quantum Beam Science, Graduate School of Science and Engineering, Ibaraki University, Tokai 319-1106, Japan.
  • *6)MDX Research Center for Element Strategy, Institute of Integrated Research, Institute of Science Tokyo, Yokohama 226-8503, Japan.
  • *7)Department of Chemistry, Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555, Japan.

  • Journal of the American Chemical Society, 2025. DOI: 10.1021/jacs.5c04467.

10.Ultra‐High Mobility Atomically‐Ordered InGaZnO Transistors Through Atomic Layer Deposition

  • Yoon-Seo Kim*1, Hyeon Woo Kim*1*2, Taewon Hwang*1, Jinho Ahn*1, Sung Beom Cho*3*4, and Jin-Seong Park*1

  • *1)Division of Materials Science and EngineeringHanyang UniversitySeoul 04763, Republic of Korea
  • *2)Nano Convergence Materials CenterKorea Institute of Ceramic Engineering and Technology (KICET)Jinju 52851, Republic of Korea
  • *3)Department of Materials Science and EngineeringAjou UniversitySuwon 16499, Republic of Korea
  • *4)Department of Energy Systems ResearchAjou UniversitySuwon 16499, Republic of Korea

  • Advanced Electronic Materials, 2025, 11.15: e00137. https://doi.org/10.1002/aelm.202500137.
  • This is an open access article under the CC BY 4.0 license.

11.Hydrogen embrittlement phenomena from incubation stage to fracture associated with strain-induced vacancy-hydrogen complexes in iron

12.Role of strain-induced dislocations and vacancy-type defects formed during the incubation period leading to hydrogen embrittlement of iron

  • Y Sugiyama*1*2 and K Takai*3

  • *1)Graduate School of Science and Technology, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan
  • *2)Steel Research Laboratory, Nippon Steel Corporation, 20-1 Shintomi, Futtu, Chiba 293-8511, Japan
  • *3)Department of Engineering and Applied Sciences, Faculty of Science and Technology, Sophia University, 7-1 Kioi-cho,
    Chiyoda-ku, Tokyo 102-8554, Japan

  • Journal of Physics: Conference Series. IOP Publishing, 2025. p. 012008. DOI 10.1088/1742-6596/3035/1/012008.
  • This is an open access article under the CC BY 4.0 license.

13.Effects of aging treatments on the annihilation and accumulation behavior of hydrogen-enhanced strain-induced vacancies formed in tempered martensitic steel


Contact Us


If you have any questions or concerns about our products,
please feel free to contact us using the inquiry form below.
Contact Us