1999: Papers, Journals, Books

1.Desorption Kinetics of Ar Implanted into Si

• Norio Hirashita
• VLSI R＆D Center., Oki Electric Industry Co.,Ltd.
• Jpn.J.Appl.Phys.,38,613(1999)

2.Effects of Halogen Ions on the X-Ray Characteristics of Gd₂O₂S:Pr Ceramic Scintillators

• Norio Hirashita
• VLSI R＆D Center., Oki Electric Industry Co.,Ltd.
• Jpn.J.Appl.Phys.,38,613(1999)

3.Process integration induced thermodesorption from SiO₂/SiLK resin dielectric based interconnects

• M.R.Baklanov*, M.Muroyama**, M.Judelewicz*, E.Kondoh*, H.Li*, J.Waeterloos***, S.Vanhaelemeersch* and K.Maex
• IMEC*, Sony Corporation**, The Dow Chemical Company***
• J.Vac.Sci.Technol.B,17,2136(1999)

1999: Conference Abstracts

1. Analysis of Temperature-Programmed Desorption Data Using Two-Dimensional Correlation Spectroscopy

• Nobuo Sugita, Eiji Abe, Nobuyoshi Miyabayashi*
• Toyohashi University of Technology, *Department of Electronic Science
• Proceedings of the 22nd Symposium on Information Chemistry (Fall 1999): JP12

2. Study on the Adsorption State of Alkanethiol SAM Films Using the Temperature-Programmed Desorption Method

• Nobuyuki Araki*, Jae-Geun Roh*, Masahiko Hara*,**, W. Knoll*
• *RIKEN Frontier, **Tokyo Institute of Technology, School of Science and Engineering
• Proceedings of the 60th Applied Physics Society Meeting (Fall 1999): 2p-Q-8

3. Adsorption States of Alkanethiol Self-Assembled Monolayers on Au(111)

• J. Noh, T. Araki, M. Hara, H. Sazabe, W. Knoll
• FRP RIKEN (RIKEN Frontier)
• Proceedings of the 60th Applied Physics Society Academic Conference (Fall 1999): 2p-Q-9

4. Thermal Desorption Gas Analysis of SiO₂ Films Fabricated by Inductively Coupled Plasma CVD

• Tetsuya Hattori, Shigeru Semura, Chie Fukuda, Nobuhiro Akasaka
• Sumitomo Electric Industries, Ltd.
• Proceedings of the 60th Applied Physics Society Conference (Fall 1999): 3p-H-1

5. Thermal Behavior of Hydrogen in SiN/SiO₂ Films

• Yoshiya Kawashima, Ziyuan Liu, Hideo Kawano, Tsuyoshi Hirata*
• NEC Device Evaluation Technology Laboratories, *NEC Semiconductor Production Technology Headquarters
• Proceedings of the 60th Applied Physics Society Academic Conference (Fall 1999): 3p-ZT-16

6. Mechanism of Al Wire Corrosion by Cl in Inorganic CVD-TiN Films

• Kenji Hirasawa, Yoshitaka Nakamura, Tsuyoshi Tamaru, Toshihiro Sekiguchi, Takuya Fukuda
• Hitachi, Ltd. Device Development Center
• Proceedings of the 60th Applied Physics Society Conference (Fall 1999): 3a-ZN-2

7. Silicide Formation Process in Co/a-Si:H/c-Si

• Kazufumi Kusamura, Masahiko Tsuchiya, Yoko Yoshida, Hisami Soe, Mitsuya Motohashi, Kazuaki Honma
• Tokyo Denki University, Faculty of Engineering
• Proceedings of the 60th Applied Physics Society Academic Conference (Fall 1999): 3a-ZN-6

8. Analysis of Surface-Adsorbed Water on Si Wafers Using APIMS-TDS (IV)

• Toshihiro Morimoto, Kenichi Kamimura
• Advanced Technology Research Institute, Nippon Steel Corporation
• Proceedings of the 60th Applied Physics Society Conference (Fall 1999): 3a-ZQ-9

9. Analysis of the Temperature-Dependent Desorption Process on Vacuum-S-Terminated GaAs(001) Surfaces

• Shiro Tsukamoto, Munehiro Sugiyama*, Masahiko Shimoda, Satoshi Maeyama*, Yoshio Watanabe*, Takao Ohno, Nobuyuki Oguchi
• Kinzaikei Kenkyujo, *NTT Basic Research Laboratories
• Proceedings of the 60th Applied Physics Society Academic Conference (Fall 1999): 4a-ZK-3

10. Dehydrogenation Behavior of Amorphous Silicon Films Irradiated with High-Fluence Excimer Laser

• Michiko Takahashi, Masakazu Saito, Kenkichi Suzuki
• Hitachi, Ltd. Display Group
• Proceedings of the 60th Applied Physics Society Conference (Fall 1999): 4a-ZS-4

11. Oxygen Partial Pressure During Deposition and Gas Adsorption Characteristics of MgO Films for PDPs

• Takao Sawada, Keiji Watanabe, Keiji Fukuyama, Takuya Ohira, Masaru Kinugawa
• Mitsubishi Electric Advanced Research Laboratories
• Proceedings of the 46th Applied Physics Related Joint Conference (Spring 1999): 28p-M-4

12. Correction of the Low-Temperature Portion at the Sample Edge in the Temperature-Programmed Desorption Spectrum

• Kenji Odaka
• Hitachi, Ltd., Machinery Research Laboratory
• Proceedings of the 46th Applied Physics Related Joint Conference (Spring 1999): 30p-R-7

13. Properties of Organic Low-Dielectric-Constant Films Using Difluoroparaxylene

• Masakazu Muroyama, Ichiro Moriyama
• Sony Corporation, S.C. Process Development Department
• Proceedings of the 46th Applied Physics Related Joint Conference (Spring 1999): 30p-ZQ-14

14. Interlayer Insulation Film Compatibility Process for Fluorinated Amorphous Carbon Films

• Katsunari Koseki, Michio Ariga
• Applied Materials Japan, Inc.
• Proceedings of the 46th Applied Physics Related Union Conference (Spring 1999): 30p-ZQ-19

15. Evaluation of the Application of Fluorinated Amorphous Carbon Films to Interlayer Films

• Takayuki Matsui, Koji Kishimoto, Yoshihisa Matsubara, Manabu Iguchi, Tadahiko Horiuchi, Kazuhiko Endo*, Toru Tatsumi*, Hideki Gomi
• NEC Corporation, ULSI Device Development Laboratory, *Silicon Systems Laboratory
• Proceedings of the 46th Applied Physics Joint Conference (Spring 1999): 30p-ZQ-20

Analysis of Hydrogen Behavior in 16.SiO2/Si

• Ziyuan Liu, Yoshinari Kawashima, Hideo Kawano, Koji Hamada*, Tomohiro Hamashima*
• NEC Device Evaluation Research Lab, NEC UL Device Development Lab*
• Proceedings of the 46th Applied Physics Related Union Conference (Spring 1999): 29p-ZS-14

17. Study on the Adsorption State of Asymmetric Dialkyl Disulfide Self-Assembled Monolayers by Temperature-Programmed Desorption

• Noboru Araki*, Koji Kamei**, Katsuhiko Fujita*, Masahiko Hara*,**, W. Knoll*
• RIKEN Frontier*; Tokyo Institute of Technology**
• Proceedings of the 46th Joint Conference on Applied Physics (1999 Spring): 30p-X-17

18. Study on the Growth Process of Self-Assembled Monolayers Using Asymmetric Dialkyl Disulfides

• Koji Kamei*, Katsuhiko Fujita**, Nobuyuki Araki**, Masahiko Hara*,**, Hiroyuki Suzukabe**, W. Knoll**
• Tokyo Institute of Technology*; RIKEN Frontier**
• Proceedings of the 46th Applied Physics Conference (Spring 1999): 30p-X-18

19. Destructive Adsorption and Phase Separation of Asymmetric Disulfide SAMs on AU(111) Studied by Scanning Tunneling Microscopy

• J. NOH, M. HARA, H. SASABE, and W. KNOLL
• FRP, RIKEN
• Proceedings of the 46th Applied Physics Related Joint Conference (Spring 1999): 30p-X-19

20. Study on Wafer Direct Bonding Process in Hydrogen Ion Implantation Substrate Peeling Method

• Shoichi Yamauchi, Masaki Matsui, Hisazumi Oshima
• Denso Foundation Research Institute
• Proceedings of the 46th Applied Physics Related Union Conference (Spring 1999): 31a-ZP-2

21. Chemical Reaction Behavior of Terminal Hydrogen During Wet Processing on Hydrogen-Terminated Si Surfaces

• Yoichi Nagata, Arata Fujiwara, Hiroyuki Sakagami, Shozo Shingu, Takayuki Takahagi
• Faculty of Engineering, Hiroshima University
• Proceedings of the 46th Joint Conference on Applied Physics (Spring 1999): 28a-ZT-4

22. Measurement of P thermal desorption spectra on a Si(100) surface

• Fumihiko Hirose, Hitoshi Sakamoto
• Mitsubishi Heavy Industries, Ltd., Research Institute of Industrial Science and Technology
• Proceedings of the 46th Applied Physics Related Joint Conference (Spring 1999): 28p-ZT-11

23. Thermal Decomposition Behavior of Hard Carbon Films Prepared by ECR Plasma CVD

• Kazunori Maruyama, Tomoko Soya, Hideki Sato
• Nagaoka University of Technology, Faculty of Engineering
• Proceedings of the 46th Applied Physics Related Joint Conference (Spring 1999): 29a-M-2

24. Hydrogen Behavior on Vacuum Surfaces: Introduction

• Sonoko Tsukahara
• Nippon Vacuum Technology, Tsukuba Super Materials Research Institute
• Proceedings of the 46th Applied Physics Related Joint Conference (Spring 1999): 29a-ZH-1

25. The State of Hydrogen in Steel and Lattice Defects

• Michihiko Nagumo
• Department of Materials Science and Engineering, Faculty of Science and Engineering, Waseda University
• Proceedings of the 46th Applied Physics Related Union Meeting (Spring 1999): 29a-ZH-2

26. Hydrogen Behavior on Diamond Surfaces

• Hiroshi Kawaharada
• Faculty of Science and Engineering, Waseda University, CREST
• Proceedings of the 46th Applied Physics Related Joint Conference (Spring 1999): 29a-ZH-6

27. Analysis of Surface-Adsorbed Water on Si Wafers Using APIMS-TDS (III)

• Toshihiro Morimoto, Kenichi Kamimura
• Advanced Technology Research Institute, Nippon Steel Corporation
• Proceedings of the 46th Applied Physics Related Joint Conference (Spring 1999): 29a-ZT-4

Evaluation of SiO₂ Films Using a 28.8-inch Wafer Thermal Desorption Measurement System

• Sakae Inayoshi, Sonoko Tsukahara, Kazuya Saito, Yoichi Hoshino*, Yasuhiro Hara*
• Nippon Vacuum Technology Co., Ltd. Tsukuba Advanced Materials Research Center, *Nippon Vacuum Technology Co., Ltd. Ultra-High Vacuum Division
• Proceedings of the 46th Applied Physics Related Joint Conference (Spring 1999): 29a-ZT-5

29. NO Laser-Induced Desorption on Diamond (111)

• Taro Yamada*, Motoharu Seki**, Rong-Ying Zhuang***
• *Waseda Univ. Materials Research Lab, **IBM Almaden Research Center, ***National Chung-Shan Institute of Science and Technology, Taiwan
• Proceedings of the 46th Applied Physics Related Joint Conference (Spring 1999): 30a-L-3

30. Surface Oxidation Layer and Gas Release Characteristics of Titanium Through Smoothing Processing

• Kazumasa Ishikawa, Yoshiyuki Mizuno, Takahiro Okada, Teiichi Honma
• Chiba Institute of Technology
• Proceedings of the 46th Applied Physics Related Joint Conference (Spring 1999): 30p-R-2

31. Properties of Low-Dielectric-Constant SOG Films with Silazane Bonding

• Yuji Tashiro, Takaaki Sakurai, Yasuo Shimizu
• Tonen Energy Corporation
• Proceedings of the 46th Applied Physics Related Joint Conference (Spring 1999): 30p-ZQ-6

32. XeF2 Annealing of Ethylene-Functionalized Silica Films

• Yasuyuki Sano*, Satoshi Sugawara, Koichi Usami, Takeo Hattori*, Masakiyo Matsumura
• Tokyo Institute of Technology, Faculty of Engineering, *Musashi Institute of Technology, Faculty of Engineering
• Proceedings of the 46th Applied Physics Related Joint Conference (Spring 1999): 30p-ZQ-7

33. Interface Reactions and Silicidation Processes in Ni/a-Si:H Multilayer Films (II)

• Yoko Yoshida, Kumi Soe, Mitsuya Motohashi, Kazuaki Honma
• Tokyo Denki University, Faculty of Engineering
• Proceedings of the 46th Applied Physics Related Joint Conference (Spring 1999): 31a-ZQ-6

34. Evaluation of H Concentration in a-Si:H Using SIMS and TDS

• Akira Mikami, Takayuki Suzuki
• Sanyo Electric Co., Ltd., New Materials Research Laboratory
• Journal of Surface Analysis, Vol. 6(No. 3), A-20 (1999)

35. DRY ETCHING OF PZT FILMS WITH CF₄/Ar HIGH DENSITY PLASMA

• Chanro Park, Jun Hee Cho, Chang Ju Choi, Yeo Song Seol, and Il Hyun Choi
• Semiconductor Advanced Research Division, Hyundai Electronics Industries Co., Ltd.
• Mat. Res. Soc. Symp. Proc., Vol.541, p113, 1999 Materials Research Society

1998: Papers, Journals, Books

1. Elucidation of the Formation Processes of Ceramic Thin Films and Powders Using TG-MS

• Yutaka Sawada, Toshikazu Nishide*, Junichi Matsushita**
• Tokyo Polytechnic University, Faculty of Engineering, *Nihon University, College of Engineering, **Tokai University, Faculty of Engineering
• J. Mass Spectrum Soc. Jpn, 46, 289 (1998)

2. Application of TPD-MS (Temperature-Programmed Desorption or Decomposition Mass Spectrometry) in Materials Research

• Hitoshi Asahina, Kinji Taniguchi
• Mitsubishi Chemical Corporation, Tsukuba Research Laboratory
• J. Mass Spectrum Soc. Jpn, 46, 357 (1998)

3. Structure-Dependent Change of Desorption Species from n-Alkanethiol Monolayers Adsorbed on Au(111): Desorption of Thiolate Radicals from Low-Density Structures

• H. Kondoh, C. Kodama, and H. Nozoye
• J. Phys. Chem. B, 102, 2310 (1998)

4. Kinetic Analysis of the C49-to-C54 Phase Transformation in TiSi2 Thin Films by In Situ Observation

• H. Tanaka, N. Hirashita, and R. Sinclair
• VLSI R&D Center, Oki Electric Industry Co., Ltd.
• Jpn. J. Appl. Phys., 37, 4284 (1998)

5. Controlling the Amount of Si-OH Bonds for the Formation of High-Quality Low-Temperature Gate Oxides for Poly-Si TFTs

• Katuhisa Yuda, Hiroshi Tanabe, Kenji Sera*, and Fujio Okumura
• Functional Devices Research. Laboratories, NEC Corporation and *Electronic Component Development Division, NEC Corporation
• Mat.Res.Soc.Symp.Proc.,508,167(1998)

6. Evaluation of Hydrogen Absorption Characteristics in Pure Iron and Eutectoid Steel by Temperature-Rising Desorption Method Following Cold Drawing Processing

• Kenichi Takai*1, Goro Yamauchi*1, Mariko Nakamura*2, Michihiko Nagumo*2
• *1) Nippon Telegraph and Telephone Corporation, Technical Cooperation Center *2) Waseda University, Faculty of Science and Engineering
• Journal of the Japan Institute of Metals, 62, 3, 267-275(1998)

1998: Conference Abstracts

1. Copper Ion Exchange onto Mesoporous Aluminosilicates and Their Properties

• Yasutake Teraoka, Motonobu Takahashi, Yukako Setoguchi, Shigeyuki Asanaga*, Akinori Yasutake*, Jun Izumi*, Isamu Moriguchi, Shuichi Shikagawa
• Nagasaki Univ., *Mitsubishi Heavy Industries
• Proceedings of the 81st Catalyst Symposium, Symposium A, 113(1998.3): P55

2. NO Adsorption and Temperature-Programmed Desorption on Titanium Dioxide Powder Surfaces

• Wang Yang, Yasunori Yanagisawa
• Nara University of Education
• Proceedings of the 81st Catalysis Symposium, Session A, 115(March 1998): 2P57

3. Comparison of adsorption enthalpy and desorption activation energy distributions obtained from NH3-TPD spectra

• Takao Masuda, Tsunehiro Fujikata, Kenji Hashimoto
• Kyoto Univ. Grad. Sch. Eng.
• Proceedings of the 81st Catalysis Symposium, Session A, 24(March 1998): p. 24

4. Active Species in Photo-Olefin Metathesis Reactions on Silica

• Yasuhiro Tanaka, Shigenobu Matsuo, Tsuyoshi Takenaka, Toshio Yoshida*, Takuzo Funabiki, Yoshihiro Yoshida
• Kyoto Univ. Grad. Sch. Eng., *Nagoya Univ. Grad. Sch. Eng.
• Proceedings of the 81st Catalysis Symposium, Session A, 34(1998.3): p. 34

5. Direct NO Decomposition Activity of Strontium Titanate-Based Perovskite Oxides

• Yasuji Yokoi, Hiroshi Uchida
• Tokyo Gas Research Institute
• Proceedings of the 81st Catalysis Symposium, Symposium A, 40(March 1998): p. 40

6. Hydrogenation Desulfurization of Thiophenes Using Pt/HZSM-5

• Tadahiro Kurosaka, Masatoshi Sugioka
• Muroran Institute of Technology
• Proceedings of the 81st Catalysis Symposium, Session A, 51(March 1998): p. 51

7. Reduction of NOx Using Titania-Supported Zeolite Catalysts

• Hiroshi Iwato, Hiroshi Konan, Keiji Hashimoto*, Yoshiya Kiyoshi
• Kinki Univ. Sci. Tech., *Osaka City Inst. Tech. Res. Center
• Proceedings of the 81st Catalysis Symposium, Session A, 53(1998.3): p. 53

8. Decomposition Mechanism of NOx-Type Adsorbed Species on Copper Ion-Exchanged Zeolite

• Hironobu Ono, Kohei Okumura, Masahide Shimokawabe, Nobutsune Takezawa
• Hokkaido Univ. Grad. Sch. Eng.
• Proceedings of the 82nd Catalysis Symposium A, 131(1998.9): 3D425

9. Investigation of Pd Species in Active Pd Zeolites for CH4-SCR

• Ken Ogura, Susumu Kage, Eiichi Kikuchi
• Waseda Univ. School of Science and Engineering
• Proceedings of the 82nd Catalysis Symposium A, 132 (September 1998): 3D426

10. Effect of Titanium Treatment on the Selective Reduction of NOx over Silver-Alumina Catalysts

• Ichiro Goto, Makoto Yamaguchi, Masaki Wang, Mikio Kumagai
• Industrial Creation Research Institute
• Proceedings of the 82nd Catalysis Symposium, A, 134 (September 1998): 3D428

11. N₂O decomposition reaction on supported pH catalysts using the pulse method

• Kenji Aoyagi, Koichi Yuzaki, Hiroshi Uezuka, Shinichi Ito, Kimio Kunimori
• Department of Materials Science and Engineering, University of Tsukuba
• Proceedings of the 82nd Catalysis Symposium, A, 147 (September 1998): 4D414

12. O₂ Desorption Mechanism in the N₂O Decomposition Reaction on Co-MgO Solid Solution Catalysts

• Kenzo Oshihara, Kenichi Akika*
• Tokyo University of Science, Faculty of Fundamental Science and Engineering, *Tokyo Institute of Technology, School of Interdisciplinary Science and Engineering
• Proceedings of the 82nd Catalysis Symposium A, 148 (September 1998): 4D415

13. Adsorption and Temperature-Programmed Desorption of NO and CO on Strontium Titanate Powder

• Nobuko Edo, Kanako Inao, Shiho Tokudome, Yasunori Yanagisawa
• Nara University of Education
• Proceedings of the 82nd Catalysis Symposium, A, 2(September 1998): 1P202

14. Decomposition reaction of carboxylic acids adsorbed on Ni(110)

• Kei Yamagata, Jun Kubota, Junko Nomura, Chiaki Hirose, Kazunari Domoto, Fumitaka Wakabayashi*
• Tokyo Institute of Technology, Resources Research Institute, *National Museum of Nature and Science
• Proceedings of the 82nd Catalysis Symposium, A, 207 (September 1998): 3D601

15. Dehydrogenation of Alcohols Using Muscovite Catalysts

• Keiji Hashimoto, Naoji Tokai
• Osaka Municipal Industrial Research Institute
• Proceedings of the 82nd Catalysis Symposium A, 21(September 1998): 1P222

16. Gas-phase Beckmann rearrangement using FSM-16 catalysts doped with Al, Zn, and Cd salts—Acidity, basicity, activity, and product selectivity of the catalysts—

• Daisuke Masamichi, Tsuyoshi Nakajima
• Shinshu Univ. Faculty of Engineering
• Proceedings of the 82nd Catalysis Symposium A, 22(September 1998): p. 223

17. Surface Structure and Acidic Properties of Monolayer Tungsten Oxide Catalysts on Various Metal Oxides

• Nobuhiro Naito, Naonobu Katada, Mikio Niwa
• Tottori University Faculty of Engineering
• Proceedings of the 82nd Catalysis Symposium A, 233 (September 1998): 4D603

18. Composite Design of Co/Al₂O₃ Immobilized Catalyst Surfaces Using Co₂(CO)₈ and Study of Catalytic Properties

• Kimihiro Takamura, Takafumi Shito, Kiyotaka Asakura, Yasuhiro Iwasawa
• The University of Tokyo, Graduate School of Science
• Proceedings of the 82nd Catalysis Symposium A, 237(September 1998): 4D607

19. Structure and Acidic Properties of Ga-MCM-41

• Kazuhiro Okumura, Koichi Nishigaki, Miki Niwa
• Tottori Univ. Faculty of Engineering
• Proceedings of the 82nd Catalysis Symposium, A, 254 (September 1998): 3D702

20. Adjustment of Alumina-Crosslinked Mica with Different Pillar Introduction Amounts and Its Acid Properties

• Shigeaki Kitabayashi, Yukiko Kamata, Takayoshi Shindo, Izumitaro Ozawa
• Akita University Faculty of Engineering
• Proceedings of the 82nd Catalysis Symposium A, 262 (September 1998): 3D710

21.SO₄(2-)-ZrO₂ Catalysts for Isomerization of n-Butane. Study of Deactivation Process and Characterization of Coke Deposits

• C.R. Vera, C.L. Pieck*, K. Shimizu, C.A. Querini*, J.M. Parera*
• National Institute for Resources and Environment (Japan), *INCAPE (Argentina)
• Proceedings of the 82nd Catalyst Symposium A, 273 (September 1998): 3D721

22. Determination of Acid Properties of Ferrosilicates by Water Vapor Treatment Ammonia Temperature-Programmed Desorption

• Tetsuo Miyamoto, Naonobu Katada, Mikio Niwa, Akihiko Matsumoto*, Kazuo Tsutsumi*
• Tottori Univ., *Toyohashi Univ. of Tech.
• Proceedings of the 82nd Catalysis Symposium, A, 298 (September 1998): 4D721

23. Correlation between NO Direct Decomposition Activity and Electronic States in Perovskite Oxide Catalysts

• Yasuji Yokoi, Isamu Yasuda, Hiroshi Uchida, *Osamu Okada, **Yasuhisa Nakamura, ***Haruji Kawasaki
• Tokyo Gas, *Osaka Gas, **Toho Gas, ***Seibu Gas
• Proceedings of the 82nd Catalysis Symposium, A, 323 (September 1998): 3D824

24. Activity of Zirconia-Supported Sulfate Monolayer Solid Superacid Catalysts for the Friedel-Crafts Reaction

• Naoko Anshin, Junichi Endo, Naonobu Katada, Miki Niwa
• Tottori University Faculty of Engineering
• Proceedings of the 82nd Catalysis Symposium A, 343 (September 1998): 4D819

25. Development of Phosphoric Acid Aluminum-Based Catalysts for CFC Degradation (5)

• Maiko Ninomiya, Hironori Wakamatsu, Hiroyasu Nishiguchi, Tatsuki Ishihara, Yusaku Takita
• Oita University of Technology
• Proceedings of the 82nd Catalysis Symposium A, 35(1998.9): 2P205

Reduction of 26.V,W-Substituted 12-Molybdophosphine Catalysts

• Toyoko Morita, Wataru Ueda*, Kenichi Akika
• Tokyo Institute of Technology, School of Interdisciplinary Science and Engineering, *Tokyo University of Science, Faculty of Basic Science and Engineering
• Proceedings of the 82nd Catalysis Symposium, A Session, 5(September 1998): p. 205

27. Partial Oxidation of Propene over Adsorbed NO₂/Metal Oxides

• Atsushi Ueda, Tetsuhiko Kobayashi
• Kyoto Institute of Technology
• Proceedings of the 82nd Catalysis Symposium A, 71(September 1998): p. D317

28. Investigation of Methanol Decomposition Reactions Using Pd Composite Evaporation Thin Films

• Motoi Sasaki, Takehiko Ito, Hideaki Hamada
• National Institute of Advanced Industrial Science and Technology (AIST) Materials Research Institute
• Proceedings of the 82nd Catalyst Symposium, A Session, 9(September 1998): p. 209

29. Novel Mechanism in the NO-CO Reaction over Immobilized Co(II)/Al₂O₃ Catalysts

• Yutomo Yamaguchi, Takafumi Shito, Kiyotaka Asakura, Yasuhiro Iwasawa
• Graduate School of Science, The University of Tokyo
• Proceedings of the 82nd Catalysis Symposium B, 360 (September 1998): 1D105

30. Catalytic Effect of Solid Acid Sites Formed on Thin Layers of Tin Oxide-Supported Molybdenum Oxide in the Oxidation of Methanol

• Miki Niwa, Junya Igarashi, Naobumi Katada
• Faculty of Engineering, Tottori University
• Proceedings of the 82nd Catalysis Symposium, B Session, 442 (September 1998): 1D206

31. Reaction producing ethane and ethylene from methane using carbon dioxide

• Wang Ye, Takahashi Yoshimoto, Otsuka Yasuo
• Institute of Reaction Chemistry, Tohoku University
• Proceedings of the 82nd Catalysis Symposium B, 458 (September 1998): 1D211

32. Low-Temperature Methane Combustion Using a Pd Catalyst Supported on a Single Oxide

• Widjaja Hardiyanto, Yoshifumi Sekizawa, Koichi Eguchi
• Graduate School of Engineering, Kyushu University
• Proceedings of the 82nd Catalysis Symposium, B Session, 466 (September 1998): 1D213

33. Catalytic Properties of FSM-16 as a Solid Acid

• Takashi Yamamoto, Tsunehiro Tanaka, Takuzo Funabiki, Satoru Yoshida
• Graduate School of Engineering, Kyoto University
• Proceedings of the 82nd Catalysis Symposium, B Session, 494 (September 1998): 2D207

34. Anisotropy of Grain Boundary Defects in Microcrystalline Silicon

• Michio Kondo, Makoto Fukawa, Riki Guo, Akihisa Matsuda
• Electrical Research Laboratories, Thin Film Silicon Solar Cell Super Lab
• Proceedings of the 59th Applied Physics Society Conference (Fall 1998): 15a-ZC-10

35. Effect of CH₂F₂ Addition in Oxide Film Etching

• Tadashi Niimura, Kayoko Omiya, Naoya Kaneda*, Takaya Matsushita*
• (Toshiba Corporation, Production Technology Research Laboratory, *Toshiba Corporation, Semiconductor Production Technology Promotion Center)
• Proceedings of the 59th Applied Physics Society Conference (Fall 1998): 15a-C-5

36. Effects of Atmospheric and Vacuum Heating on the Gas Adsorption Characteristics of Fluorescent Films

• Mayuki Yamane, Shigeo Hirasawa*, Etsuhiro Koseki**
• Hitachi, Ltd., Machinery Research Laboratory, *Hitachi, Ltd., Home Appliances and Information Media Business Division, **Hitachi Device Engineering, Ltd.
• Proceedings of the 59th Applied Physics Society Conference (Fall 1998): 15p-M-5

37. Interface Reactions and Silicide Formation Processes in Ni/a-Si:H Multilayer Films (I)

• Yoko Yoshida, Azusa Mogi, Kumi Soe, Mitsuya Motohashi, Kazuaki Honma
• Tokyo Denki University, Faculty of Engineering
• Proceedings of the 59th Applied Physics Society Conference (Fall 1998): 15p-ZL-16

38. Surface Reaction Mechanism of Tri-n-butylphosphine on Diamond C(001) Surfaces

• Toshihiko Nishimori, Hitoshi Sakamoto, Yuji Takakuwa*,**
• Mitsubishi Heavy Industries, Ltd., *Tohoku University, **Japan Science and Technology Agency (JST) Sakigake Program
• Proceedings of the 59th Applied Physics Society Conference (Fall 1998): 16p-N-6

39. Temperature Dependence of Hydrogen Release in Hydrogen-Treated Ge-Doped SiO₂ Glass

• Toshiaki Kasahara, Makoto Fujimaki, Yoshiji Ohki, Masakazu Kato*, Yuichi Morishita*
• Waseda University, *Showa Electric Wire and Cable Co., Ltd.
• Proceedings of the 59th Applied Physics Society Academic Conference (Fall 1998): 16p-P13-7

40. Development of a Moisture Absorption Characteristic Evaluation Method for Semiconductor Interlayer Film Process Development

• Atsushi Ohtake, Kinya Kobayashi, Fumitoshi Ito*, Akira Takamatsu*
• Hitachi, Ltd. Hitachi Research Laboratory, *Hitachi, Ltd. Semiconductor Business Unit
• Proceedings of the 59th Applied Physics Society Academic Conference (Fall 1998): 17a-ZG-1

41. Fabrication of Low-Dielectric Constant, Low-Humidity-Absorbing Organic SOG Films

• Noriko Yamada, Toru Takahashi
• Nippon Steel Corporation, Advanced Technology Research Center
• Proceedings of the 59th Applied Physics Society Conference (Fall 1998): 17p-ZG-3

42. Characteristics of Low-Dielectric-Constant Porous SOG Films

• Hiroki Arao, Atsushi Fujinai, Miki Egami, Ryo Muraguchi, Kazuaki Ichino, Akira Nakajima, Michio Komatsu
• Catalyst Chemical Industry Co., Ltd.
• Proceedings of the 59th Applied Physics Society Conference (Fall 1998): 17p-ZG-4

43. Evaluation of High-Concentration Phenyl-Containing Silica Membranes

• Yasuyuki Sano*, Koichi Usami, Satoshi Sugawara, Takeo Hattori*, Masakiyo Matsumura
• Tokyo Institute of Technology, Faculty of Engineering, *Musashi Institute of Technology, Faculty of Engineering
• Proceedings of the 59th Applied Physics Society Conference (Fall 1998): 17p-ZG-9

44. Relationship between the Temperature-Dependent Desorption Signal of Ar-Ion-Implanted Si and Changes in Ar Distribution within Amorphous Si

• Joji Nakata, Shubun Yabu*
• NTT Basic Research Laboratories, *NTT-AT
• Proceedings of the 59th Applied Physics Society Conference (Fall 1998): 18a-ZL-4

45. Surface Reactions in Ultra-Fine Holes

• Jun Kanamori, Naoki Ikegami, Norio Hirasita
• OKI Electric Industry Co., Ltd., Ultra-LSI Research and Development Center
• Proceedings of the 45th Applied Physics Related Joint Conference (Spring 1998): 29a-ZR-2

46. Fully Aromatic Polyether-Based Polymer Interlayer Insulation Film

• Kohei Kita
• Asahi Kasei Corporation, Fundamental Research Laboratory
• Proceedings of the 45th Applied Physics Related Union Conference (Spring 1998): 30p-M-4

47. Adsorption and Desorption Behavior of Organic Materials on Silicon Wafer Surfaces

• Koichiro Saga, Takeshi Hattori
• Sony Corporation Semiconductor Company Ultra-LSI Research Laboratory
• Proceedings of the 45th Applied Physics Related Joint Conference (Spring 1998): 28p-PB-6

48. Analysis of Surface-Adsorbed Water on Wafers Using APIMS-TDS

• Toshihiro Morimoto, Kenichi Uemura
• Nippon Steel Corporation Advanced Technology Research Laboratories
• Proceedings of the 45th Applied Physics Related Union Conference (Spring 1998): 28p-PB-7

49. Adsorption and Desorption Behavior of Organic Materials on Wafer Surfaces

• Yoshimi Shiramizu, Suguru Tanaka, Hiroshi Kitajima, Iwao Natori*
• NEC Corporation, Hitachi Tokyo Electronics
• Proceedings of the 45th Applied Physics Related Joint Conference (Spring 1998): 28p-PB-8

50. Effect of Annealing on MOCVD-BST

• Michihito Ueda, Takashi Otsuka, Kiyoyuki Morita
• Central Research Laboratory, Matsushita Electric Industrial Co., Ltd.
• Proceedings of the 45th Applied Physics Related Joint Conference (Spring 1998): 28p-ZF-9

51. Hydrogen Desorption from Acetylene-Adsorbed Si(100) Surfaces

• Hideki Nakazawa, Maki Suemitsu
• Tohoku University, Research Institute of Electrical Communication
• Proceedings of the 45th Applied Physics Related Joint Conference (Spring 1998): 29a-YG-11

52. Adsorption and Hydrogen Desorption Processes of Si Hydrides on Si Surfaces

• Maki Suemitsu
• Research Institute of Electrical Communication, Tohoku University
• Proceedings of the 45th Applied Physics Related Joint Conference (Spring 1998): 29a-ZR-5

53. Application of Precision Chemical Polishing to Surface Treatment of Ultra-High Vacuum Materials

• Sakae Inayoshi, Kazuya Saito, Yukie Sato, Sonoko Tsukahara, Katsunobu Ishizawa*, Ken Nomura*, Akihisa Shimada*, Minoru Kanazawa**
• Japan Vacuum Technology Co., Ltd., *Sanae Oil Co., Ltd., **Sanae Plant Industries Co., Ltd.
• Proceedings of the 45th Applied Physics Related Joint Conference (Spring 1998): 29p-X-10

54. Water Desorption Characteristics at Elevated Temperatures on Stainless Steel Surfaces

• Tanaka, Tomonari; Takeuchi, Kyoko; Tsuji, Yasushi
• ULVAC, Inc. Corporate Center
• Proceedings of the 45th Applied Physics Related Joint Conference (Spring 1998): 29p-X-5

55. Low Gas Emission Characteristics of Stainless Steel Coated with 55.Si Thin Film

• Sakae Inayoshi, Yukie Sato, Sonoko Tsukahara, Akira Kanahara*
• Japan Vacuum Technology Co., Ltd., *Kanazawa Institute of Technology
• Proceedings of the 45th Applied Physics Related Joint Conference (Spring 1998): 29p-X-7

56. Low-Dielectric-Constant Organic Silica Films (II) - Thermal Stability of Various Organic Groups Contained

• Mitsuo Kobayashi*, Kazuhito Sumimura, Satoshi Sugawara, Takeo Hattori*, Masakiyo Matsumura
• Tokyo Institute of Technology, Faculty of Engineering; *Musashi Institute of Technology, Faculty of Engineering
• Proceedings of the 45th Applied Physics Conference (Spring 1998): 30a-M-10

57. CO/a-Si:H Silicide Formation (I)

• Osamu Furubayashi, Masahiko Tsuchiya, Kumi Soe, Mitsuya Motohashi, Kazuaki Honma
• Tokyo Denki University, Faculty of Engineering
• Proceedings of the 45th Applied Physics Related Joint Conference (Spring 1998): 30a-N-5

58. Formation Process of CO Silicide in N2 and NH3 – Influence of Residual Oxygen –

• Noriko Tsutsumi, Tatsuo Sugiyama*, Ryuji Eto*, Takashi Kamizaki**, Shinichi Ogawa*
• Matsushita Electric Industrial Co., Ltd., Microcomputer Division, *Matsushita Electric Industrial Co., Ltd., Professional Development Division, **Matsushita Techno Research Co., Ltd.
• Proceedings of the 45th Applied Physics Related Joint Conference (Spring 1998): 30a-N-6

59. Study on Suppression of HSQ Film Degradation by H₂O Plasma

• Eiji Tamaoka, Nobuo Aoi, Tetsuya Ueda, Akihiro Yamamoto, Shuichi Mayumi
• Panasonic Corporation, Process Development Center
• Proceedings of the 45th Applied Physics Related Joint Conference (Spring 1998): 30p-M-10

60. High-Temperature Characteristics of Low-Dielectric-Constant Organic Interlayer Insulation Films

• Jun Takasho, Tomohiro Tomizawa, Ken Inokuru, Toru Hara
• Faculty of Engineering, Hosei University
• Proceedings of the 45th Applied Physics Related Union Conference (Spring 1998): 30p-M-7

61. Thermal Desorption Characteristics of Low-Dielectric-Constant Ion-Implanted Organic SOG Films

• Naoki Matsubara, Hideki Mizuhara, Hiroyuki Watanabe, Yoshihiro Sanzawa, Yasunori Inoue, Hiroshi Hanabusa, Keiichi Yoshinaga
• Sanyo Electric Co., Ltd., Microelectronics Research Laboratory
• Proceedings of the 45th Joint Conference on Applied Physics (Spring 1998): 30p-M-9

1997: Papers, Journals, Books

1. Roles of Surface Functional Groups on TiN and SiN Substrates in Resist Pattern Deformations

• Ryoko Yamanaka, Toshiyuki Mine, Toshihiko Tanaka, and Tsuneo Terasawa
• Central Research Laboratory, Hitachi Ltd.
• Jpn. J. Appl. Phys., 36, 7620 (1997)

2. Formation and Exchange Processes of Alkanethiol Self-Assembled Monolayer on Au(111) Studied by Thermal Desorption Spectroscopy and Scanning Tunneling Microscopy

• Naoki Nishida*2, Masahiko Hara*1, Hiroyuki Sasabe*1 and Wolfgang Knoll*1
• *1 Frontier Research Program, RIKEN, *2 Graduate School of Science and Engineering, Universion of Saitama
• Jpn.J.Appl.Phys.,36,2379(1997)

3.Evidence that carbide precipitation produces hydrogen traps in Ni17Cr8Fe alloys

• G.A. Young and J.R. Scully
• Center for Electrochemical Science & Engineering, Department of Materials Science and Engineering, The University of Virginia
• Scripta Meterialia,No6,713(1997)

4.Improvement of structural and electrical properties in low-temperature gate oxides for poly-Si TFTs by controlling O2/SiH4 ratios

• Katuhisa Yuda, Hiroshi Tanabe, and Fujio Okumura
• Functional Devices Research. Laboratories, NEC Corporation
• Digest of Technical Papers AMLCD '97, (1997)pp.87-90

5.A method for calculation the activation energy distribution for desorption of ammonia using a TPD spectrum obtained under desorption control conditions

• Takao Masuda, Yoshihiro Fujikata, Hideo Ikeda, Shun-ichi Matsushita, Kenji Hashimoto
• Division of Chemical Engineering, Graduate School of Engineering, Kyoto University
• Appl.Catal.A,162,29(1997)

6.A method of calculating adsorption enthalpy distribution using ammonia temperature-programmed desorption spectrum under adsorption equilibrium conditions

• Takao Matsuda, Yoshihiro Fujikawa, Shin R. Mukai, Kenji Hashimoto
• Division of Chemical Engineering, Graduate School of Engineering, Kyoto University
• Appl.Catal.A,165,57(1997)

7. Analysis Method for Contaminants on Substrate Surfaces: Thermal Desorption Analysis

• Shubun Yabu
• NTT Advanced Technologies
• Chemical Contamination in Semiconductor Process Environments and Countermeasures, Realize Co., Ltd., p. 291

1997: Conference Abstracts

1. Evaluation of Si Oxide Film Quality Using TDS and FT-IR

• Kumi Terada, Sonoko Umemura, Akinobu Teramoto*, Kiyoteru Kobayashi*, Hiroshi Kurokawa, Fumiaki Baba
• Mitsubishi Electric Corporation, Advanced Research Laboratories, *UL Research Laboratory
• Proceedings of the 58th Applied Physics Society Academic Conference (Fall 1997): 2a-D-10

2. Reduction of Water in the Internal Structure of PECVD-SiO₂ Gate Insulation Films

• Katsuhisa Yuda, Hiroshi Tanabe, Kenji Sera, Fujio Okumura
• NEC Functional Electronics Laboratories
• Proceedings of the 58th Applied Physics Society Academic Conference (Fall 1997): 3p-K-3

3. Blister Formation Behavior in Silicon Wafers with Helium-Hydrogen Two-Stage Injection

• Ken Nakajima, Ryoko Takada, Mitsuru Sudo, Mitsuhiro Kaizuma*, Tetsuya Nakai, Kenji Tomizawa
• Mitsubishi Materials Silicon Corporation, Technology Division, Development Center, *Mitsubishi Materials Corporation, General Research Laboratory
• Proceedings of the 58th Applied Physics Society Academic Conference (Fall 1997): 3p-PB-2

4. Direct Observation of Smart-Cut Behavior Using TDS (2)

• Ryoko Takada, Kazunari Takaishi, Kenji Tomizawa
• Mitsubishi Materials Silicon Corporation, Technology Division, Development Center
• Proceedings of the 58th Applied Physics Society Academic Conference (Fall 1997): 3p-PB-3

5. In-situ Observation of the C49/C54 TiSi₂ Phase Transition Using TDS

• Hiroyuki Tanaka, Norio Hirasita, Akio Kita
• Oki Electric Industry Co., Ltd., Ultra-LSI Research and Development Center
• Proceedings of the 58th Applied Physics Society Academic Conference (Fall 1997): 4a-D-10

6. Effect of Fluorine Desorption from ECR-CVD SiOF Films

• Tatsuya Usami, Hideki Gomi
• NEC ULSI Device Development Laboratories
• Proceedings of the 58th Annual Meeting of the Japan Society of Applied Physics (Fall 1997): 4a-K-5

7. Investigation of Low-Dielectric-Constant Hydrogen Silsesquioxane via Fluorine Modification

• Yoshihiro Nakata, Shunichi Fukuyama, Michiko Katayama, Shiro Yamaguchi
• Fujitsu Laboratories Ltd.
• Proceedings of the 58th Applied Physics Society Conference (Fall 1997): 4p-K-15

8. Methylsilan-H₂O₂ System Self-Leveling CVD Process

• Masazumi Matsuura, Takaaki Iuchi*, Taku Masuda*, Yoji Masuko
• Mitsubishi Electric Corporation ULSI Development Laboratories, *Ryoden Semiconductor Corporation
• Proceedings of the 58th Applied Physics Society Conference (Fall 1997): 4p-K-2

9. Physical Property Evaluation of Inorganic Porous Membrane SOG Material (HPS)

• Ryo Muraguchi, Akira Nakajima, Michio Komatsu, Yoshiyuki Okura*, Motomori Miyajima*, Hideki Harada**, Shunichi Fukuyama**
• Catalyst Chemicals Co., Ltd. Fine Research Institute, *Fujitsu Ltd., **Fujitsu Laboratories Ltd.
• Proceedings of the 58th Applied Physics Society Academic Conference (Fall 1997): 4p-K-7

10. Gas Release Characteristics of Phosphor Powder and Water Glass

• Miyuki Yamane, Shujin Takahashi*, Shigeo Hirasawa**, Etsuhiro Koseki***
• Hitachi, Ltd., Machinery Research Laboratory, *Kasado Works, **Electronic Devices Division, ***Hitachi Device Engineering Co., Ltd.
• Proceedings of the 58th Applied Physics Society Academic Conference (Fall 1997): 4p-ZT-8

11. Evaluation of Organic Adsorption on Ion-Implanted Silicon Wafer Surfaces

• Koichiro Saga, Takeshi Hattori
• Sony Corporation, Semiconductor Company, Ultra-LSI Research Laboratory
• Proceedings of the 58th Applied Physics Society Academic Conference (Fall 1997): 3p-D-2

12. Adsorption Form of Antioxidant (BHT) onto Silicon Wafers During Wafer Box Storage

• Toshihiko Imai, Toyohiko Mizuno, Toru Hatano
• Shin-Etsu Handotai Co., Ltd. Semiconductor Shirakawa Research Laboratory
• Proceedings of the 58th Applied Physics Society Academic Conference (Fall 1997): 3p-D-4

13. Organic Contamination of Si Surfaces from Cleanrooms After Various Cleaning Processes and Its Removal by Re-Cleaning

• Masaharu Nakamori, Nahomi Aoto
• NEC ULSI Device Development Laboratory
• Proceedings of the 58th Applied Physics Society Academic Conference (Fall 1997): 3p-D-5

14. Analysis of IPA Adsorption on Si Wafer Surfaces Using APIMS-TDS

• Toshihiro Morimoto, Kenichi Uemura
• Advanced Technology Research Laboratories, Nippon Steel Corporation
• Proceedings of the 58th Applied Physics Society Academic Conference (Fall 1997): 3p-D-7

15. Void-Cut SOI via H+ Injection (4)

• Kakizaki, K., Hara, T., Inoue, M.*, Kajiyama, K.*,
• Faculty of Engineering, Hosei University, *Ion Engineering Research Institute,
• Proceedings of the 58th Applied Physics Society Conference (Fall 1997): 3p-PB-4,

16. Formation of Single-Crystal Si Thin Films by 1-MeV H+ Implantation

• Joji Nakata, Takashi Nishioka*
• NTT Basic Research Laboratories, *NTT Photonics Laboratories
• Proceedings of the 58th Applied Physics Society Conference (Fall 1997): 3p-ZK-12

17. High-Temperature Characteristics of Low-Dielectric-Constant Fluorocarbon Films

• Jun Takasho, Tomohiro Tomizawa, Ken Inokuru, Toru Hara, Yang*, D. Evans*, Keizo Kakizaki**
• Hosei University, Faculty of Engineering, *SMT, **Sharp ULSI Research Laboratory
• Proceedings of the 58th Applied Physics Society Conference (Fall 1997): 4a-K-8

18. Characterization of α-C:H Films Using Benzene

• Zheng et al.
• Samsung Electronics Co., Ltd. Semiconductor Research Institute
• Proceedings of the 58th Applied Physics Society Academic Conference (Fall 1997): 4p-YA-3

19. Pure Electrolytic Anode Water Rinse for Residual Sulfuric Acid Components Inside Micro Holes

• Shinya Yamazaki, Hidemitsu Aoki, Nahomi Aoto, Takashi Futatsugi*, Kōfuku Yamashita*, Hirotsugu Yamanaka*
• NEC ULSI Device Development Laboratories, *Organo Corporation
• Proceedings of the 58th Annual Meeting of the Japan Society of Applied Physics (1997 Autumn): 5a-D-8

20. Polymetallic Wiring (VIII) - Nitrogen Desorption Process in WNX Films

• Kazuaki Nakajima, Yasushi Akasaka, Kiyotaka Miyano, Mamoru Takahashi*, Shintaro Suehiro*, Kyoichi Suguro
• Toshiba Corporation Microelectronics Technology Laboratory, *Toshiba Corporation Environmental Technology Laboratory
• Proceedings of the 44th Applied Physics Related Joint Conference (Spring 1997): 28a-PB-14

21. NMOS Hot Carrier Reliability Evaluation in SiH4-H2O2 CVD Oxide Film Processes

• Makoto Kubo, Kazuyuki Yahiro, Kenichi Tomita
• Toshiba Corporation Semiconductor Production Technology Promotion Center
• Proceedings of the 44th Applied Physics Related Union Conference (Spring 1997): 28p-F-18

22. SiO₂ Film (II) Using Triethoxysilane (TRIES)

• Satoru Hattori, Katsuyoshi Harada
• Towa Gosei Co., Ltd. New Materials Research Laboratory
• Proceedings of the 44th Applied Physics Related Joint Conference (Spring 1997): 29p-F-13

23. Direct Observation of Smart-Cut Behavior Using TDS

• Ryoko Takada, Kazunari Takaishi, Kenji Tomizawa
• Mitsubishi Materials Silicon Corporation, Technology Division, Development Center
• Proceedings of the 44th Applied Physics Related Joint Conference (Spring 1997): 29p-G-11

24. Evaluation of Residual Adsorbed IPA on Wafer Surfaces After Drying

• Koichiro Saga, Akira Okamoto, Hitoshi Kuniyasu, Takeshi Hattori
• Sony Corporation, Semiconductor Company, Ultra-LSI Research Laboratory
• Proceedings of the 44th Applied Physics Related Joint Conference (Spring 1997): 30p-D-11

25. Methylsilan-H₂O₂ System Self-Leveling CVD Process (1)

• Masazumi Matsuura, Mototaka Masuda*, Takaaki Iuchi*, Yoji Masuko
• Mitsubishi Electric Corp., ULSI Development Laboratory, *Ryoden Semiconductor Corp.
• Proceedings of the 44th Applied Physics Related Union Meeting (Spring 1997): 30p-F-14

26. Film Deposition Characteristics of SiH4/H2O2 CVD Oxide Films

• Toru Yoshie, Kimiaki Shimokawa, Masaki Yoshimaru
• Oki Electric Industry Co., Ltd., Ultra-LSI Research and Development Center
• Proceedings of the 44th Applied Physics Related Joint Conference (Spring 1997): 30p-F-15

27. Formation of High-Reliability SiOF Films Using Hydrogen Radicals

• Takuya Fukuda, Eiji Sasaki*, Takashi Hosokawa, Nobuyoshi Kobayashi
• Semiconductor Technology Development Center, Hitachi, Ltd., *Hitachi Ultra-LSI Engineering
• Proceedings of the 44th Applied Physics Related Union Meeting (Spring 1997): 30p-F-20

28. Temperature-dependent desorption spectroscopy of water from semiconductor interlayer insulating films

• Atsushi Ohtake, Kinya Kobayashi, Seiryu Kato*, Takuya Fukuda*
• Hitachi, Ltd., Hitachi Research Laboratory, *Hitachi, Ltd., Semiconductor Business Division
• Proceedings of the 44th Joint Conference on Applied Physics (Spring 1997): 30p-F-21

29. Film Formation Characteristics of Non-E.B. Polysilazane SOG

• Masayoshi Saito, Kensai Hirasawa, Takeshi Sakai, Katsuhiko Hotta*, Seiryo Kato, Akira Takamatsu, Nobuyoshi Kobayashi
• Hitachi, Ltd. Semiconductor Division, *Hitachi Microcomputer Systems, Ltd.
• Proceedings of the 44th Applied Physics Conference (Spring 1997): 30p-F-5

30. Structure-Dependent Properties of Low-Dielectric Constant HSQ Films

• Kinya Goto, Yoshiyuki Kitazawa*, Masazumi Matsuura, Yoji Masuko
• ULSI Development Laboratories, Mitsubishi Electric Corporation, *Advanced Technology Research Laboratories, Mitsubishi Electric Corporation
• Proceedings of the 44th Applied Physics Related Joint Conference (Spring 1997): 30p-F-8

31. Formation of Si Thin Film Layers by H+ Injection

• Kakizaki, K. K., Kibana, T. K., Oshima, S. T., Hara, T., Inoue, M. O.*, Kajiyama, K. J.*
• Faculty of Engineering, Hosei University, *Ion Engineering Research Institute
• Proceedings of the 44th Applied Physics Related Joint Conference (Spring 1997): 29p-G-12

32. PH₃ Adsorption Process on Si(100) Surfaces at Room Temperature

• Takekazu Tsukidate, Maki Suemitsu
• Research Institute of Electrical Communication, Tohoku University
• Proceedings of the 44th Applied Physics Related Joint Conference (Spring 1997): 29p-ZN-10

33.Room-Temperature Adsorption of SiH₄ and Si₂H₆ on P-Doped Si(100) Surfaces

• Tsukidate, Genwa; Suemitsu, Maki
• Research Institute of Electrical Communication, Tohoku University
• Proceedings of the 44th Applied Physics Related Joint Conference (Spring 1997): 29p-ZN-11

34. Adsorption Structure of Te on a Si(100) Surface

• Kenichi Tamiya, Takuya Otani, Yasushi Takeda, Toshio Urano, Takahiro Fukuhara, Shuichi Kaneko, Shozo Hongo
• Faculty of Engineering, Kobe University
• Proceedings of the 44th Applied Physics Related Joint Conference (Spring 1997): 29p-ZN-2

35. Study of Cs and D Co-adsorption Structures on Si(100) Surfaces Using MDS and TDS

• Hiroyuki Hasebe, Masayuki Shimizu, Kaoru Kojima, Shozo Hongo, Toshio Urano
• Faculty of Engineering, Kobe University
• Proceedings of the 44th Applied Physics Related Joint Conference (Spring 1997): 29p-ZN-4

36.Li, D Co-adsorption on Si(100) Surfaces Observed by MDS and TDS

• Takahiro Fukuhara, Shuichi Kaneko, Kaoru Kojima, Shozo Hongo, Toshio Urano
• Faculty of Engineering, Kobe University
• Proceedings of the 44th Applied Physics Related Joint Conference (Spring 1997): 29p-ZN-5

37.Desorption Mechanism of Deuterium from a Si(100) Surface Coadsorbed with Ba and D

• Kaoru Kojima, Shigeyoshi Fujinai, Shozo Hongo, Toshio Urano
• Kobe University, Faculty of Engineering
• Proceedings of the 44th Applied Physics Related Joint Conference (Spring 1997): 29p-ZN-6

38. Residual sulfuric acid components inside the micro-holes

• Shinya Yamazaki, Hidemitsu Aoki, Iwao Nishiyama*, Nahomi Aoto
• NEC ULSI Device Development Laboratories, *NEC Microelectronics Laboratories
• Proceedings of the 44th Applied Physics Related Joint Conference (Spring 1997): 30p-D-8

39. Effect of Moisture in SiOF Films on Dielectric Constant

• Satoshi Ueda, Gaku Sugawara, Tetsuya Ueda, Eiji Tamaoka, Shuichi Mayumi
• Matsushita Electric Industrial Co., Ltd. Semiconductor Research Center
• Proceedings of the 44th Applied Physics Related Union Conference (Spring 1997): 30p-F-18

40. Improvement of Film Properties in Hydrogenated Silsequioxane Inorganic SOG via Electron Beam Irradiation

• Yang, Jingjun; Choi, Donggyu; Wang, Shiqing; L. Foster; Nakano, Tadashi
• Allied Signal AMM
• Proceedings of the 44th Applied Physics Related Union Conference (Spring 1997): 30p-F-2

41. Study of CO Adsorption on Metal Surfaces Using TOF-ESD and FTIR In-Situ Observation

• Kazuyuki Ueda, Masakazu Date, Masamitsu Yoshimura, Kikuyo Shirawa*, Seiji Nishizawa*
• Toyota Technological Institute (Graduate School), Nippon Spectroscopy
• Proceedings of the 44th Joint Conference on Applied Physics (Spring 1997): 31a-ZN-7

42. New Low Dielectric Constant Siloxane Polymers

• Nigel P. Hacker
• Allied Signal Inc., Advanced Microelectronic Materials
• The Dielectrics Conference Extended Abstracts : Planar 97 in Japan / AlliedSignal and Rasa Industries LSD.

43. Structure Dependence of HSQ Film Properties

• Masazumi Matsuura
• Mitsubishi Electric Corporation, ULSI Development Laboratory
• The Dielectrics Conference Extended Abstracts : Planar 97 in Japan / AlliedSignal ＆ Rasa Industries LSD.

1996: Papers, Journals,本

1.Dimerization Process in Alkanethiol Self-Assembled Monolayer on Au(111)

• Naoki Nishida*2, Masahiko Hara*1, Hiroyuki Sasabe*1 and Wolfgang Knoll*1
• *1 Frontier Research Program, RIKEN, *2 Graduate School of Science and Engineering, Universion of Saitama
• Jpn.J.Appl.Phys.,35,L799(1997)

2.Thermal Desorption Spectroscopy of Alkanethiol Self-Assembled Monolayer on Au(111)

• Naoki Nishida*2, Masahiko Hara*1, Hiroyuki Sasabe*1 and Wolfgang Knoll*1
• *1 Frontier Research Program, RIKEN, *2 Graduate School of Science and Engineering, Universion of Saitama
• Jpn.J.Appl.Phys.,35,5866(1997)

3. Hiraki Kiyoshi's Doctoral Dissertation

• Norio Hirakage
• OKI Electric Industry Co., Ltd., Ultra-LSI Development Center
• The University of Electro-Communications (1996)

4. Thermal Desorption Behavior of Adsorbed Substances on Si Substrate Surfaces

• Tomoko Jimbo, Katsuhiko Ishikawa*, Masaki Ito*, Ken Tsugane, Yoshikazu Tanabe, Yoshio Saito, Hideki Tomioka
• Hitachi, Ltd. Device Development Center, *Hitachi, Ltd. Semiconductor Business Unit
• IEICE Technical Report, ED96-11, SDM96-11, 75(1996)

5. Extreme Trace Analysis for Clean Process of LSI Fabrication

• Norikuni Yabumoto
• NTT Advanced Technology Corporation
• NTT REVIEW, 8, 70 (1996)

6. Thermal Desorption Spectroscopy of (Ba, Sr)TiO3 Thin Films Prepared by Chemical Vapor Deposition

• Mikio Yamamuka, Takaaki Kawahara, Tetsuro Makita, Akimasa Yuuki and Kouichi Ono
• Semiconductor Research Laboratory, Mitsubishi Electric Corporation
• Jpn. J. Appl. Phys. 35 (1996) pp. 729-735

1996: Key Points of the Society

1.Evidence for Asymmetrical Hydrogen Profile in Thin D2O Oxidized SiO2 by SIMS and Modified TDS

• Kouichi MURAOKA, Shin-ichi TAKAGI and Akira TORIUMI
• ULSI Research Laboratories, TOSHIBA Corporation
• Extended Abstracts of the 1996 International Conference on Solid State Devices and Materials, Yokohama, 1996, pp.500-502

2. Significant Effect of OH inside Silicon Chemical Oxides on AHF (Anhydrous Hydrofluoric Acid) Etching

• Kouichi MURAOKA, Iwao KUNISHIMA, Nobuo HAYASAKA and Shin-ichi TAKAGI
• ULSI Research Laboratories, TOSHIBA Corporation
• Extended Abstracts of the 1996 International Conference on Solid State Devices and Materials, Yokohama, 1996, pp.521-523

3. Evaluation of Hydrogen in Thermally Oxidized Films by TDS Thermal Desorption Analysis

• Kumi TERADA, Hiroshi KUROKAWA, Kiyoteru Kobayashi*, Yoji Kawasaki*
• Mitsubishi Electric Corporation, Advanced Research Laboratories, *UL Research Laboratory
• Proceedings of the 57th Annual Meeting of the Japan Society of Applied Physics (Fall 1996): 7a-H-3

4. Accelerated adsorption of organic matter onto wafer surfaces due to residual fluorine

• Koichiro Saga, Takeshi Hattori
• Sony Corporation, Semiconductor Company, Ultra-LSI Research Laboratory
• Proceedings of the 57th Applied Physics Society Conference (Fall 1996): 8a-L-7

5. Effect of Wafer Surface Adsorbed Materials on Bonding Interfaces

• Ryoko Takada, Noboru Oshima, Kazunari Takaishi, Kenji Tomizawa, Takayuki Shinyouchi*
• Mitsubishi Materials Silicon Corporation, Technology Headquarters, Development Center, *Mitsubishi Materials Silicon Corporation, Technology Headquarters, Process Technology Department
• Proceedings of the 57th Applied Physics Society Conference (Fall 1996): 8p-L-6

6. Hydrogen-Induced Hot Carrier Lifetime Degradation Phenomenon in LPCVD-SiN Films (2)

• Eiji Uchida, Shunichi Tokifuji, Katsuhiko Shibusawa*, Murakami, Norio*, Nakamura, Ryuji*, Aoki, Hiroshi*, Yamamoto, Yuhiro*, Hirasaka, Norio
• Oki Electric Industry Co., Ltd., Ultra-LSI R&D Center, *Oki Electric Industry Co., Ltd., Process Technology Center
• Proceedings of the 57th Applied Physics Society Academic Conference (Fall 1996): 8p-R-18

7. Molecular Orbital Analysis of Molecular Dissociation Reactions for SiOF Film Deposition Gases

• Atsushi Ohtake, Kinya Kobayashi, Kazunori Tago, Takuya Fukuda*, Takashi Hosokawa*, Masataka Kato*
• Hitachi, Ltd., Hitachi Research Laboratory, *Hitachi, Ltd., Semiconductor Business Unit
• Proceedings of the 57th Applied Physics Society Conference (Fall 1996): 9a-H-1

8. Flattening Characteristics of Organic SOGs with Varying Carbon Content

• Kenji Hirasawa, Masayoshi Saito, Seiryo Kato
• Semiconductor Business Division, Hitachi, Ltd.
• Proceedings of the 57th Applied Physics Society Academic Conference (Fall 1996): 9a-H-20

9. Film Deposition Characteristics of SiOF Films Using PECVD with (C₂H₅O)₃SiF and (C₂H₅O)₃SiH

• Eiji Kito, Masakazu Muroyama, Masayoshi Sasaki
• Sony Corporation, Semiconductor Company, First LSI Division
• Proceedings of the 57th Applied Physics Society Academic Conference (Fall 1996): 9a-H-5

10. Investigation of the Moisture Absorption Mechanism in Fluorine-Doped SiO Films

• Masakazu Muroyama, Yutaka Haga, Masayoshi Sasaki
• Sony Corporation S.C. First LSI Division
• Proceedings of the 57th Applied Physics Society Academic Conference (Fall 1996): 9a-H-9

11. Observation of Adhered Organic Matter on Si Wafer Surfaces

• Chizuko Matsuo, Kazunari Takaishi, Kenji Tomizawa, Takayuki Shinyouchi*
• Mitsubishi Materials Silicon Corporation, Technology Division, Development Center, *Mitsubishi Materials Silicon Corporation, Technology Division, Process Technology Department
• Proceedings of the 57th Applied Physics Society Academic Conference (Fall 1996): 9a-L-8

12.Silicidation Process in Pd/a-Si:H/c-Si Multilayer Films (1)

• Shinichi Ando, Osamu Furubayashi, Kumi Adachi, Mitsuya Motohashi, Kazuaki Honma
• Tokyo Denki University, Faculty of Engineering
• Proceedings of the 57th Applied Physics Society Conference (Fall 1996): 7p-N-18

13.Higher-order hydrogen desorption processes from the Si(100) surface

• Hideki Nakazawa, Maki Suemitsu, Nobuo Miyamoto*
• Research Institute of Electrical Communication, Tohoku University, *Faculty of Engineering, Tohoku Gakuin University
• Proceedings of the 57th Applied Physics Society Academic Conference (Fall 1996): 8p-W-12

14.MDS observation of Cs and D co-adsorbed on Si(100) surfaces

• Hiroyuki Hasebe, Takahiro Fukuhara, Kaoru Kojima, Masayuki Shimizu, Shozo Hongo, Toshio Urano
• Faculty of Engineering, Kobe University
• Proceedings of the 57th Applied Physics Society Conference (Fall 1996): 8p-W-13

15.HREELS Study of the Decomposition Process of Tarsal Butylphosphine on the Si(001) Surface

• Genta Kaneda, Noriaki Sanada, Yasuo Fukuda
• Shizuoka University, Electronics Research Laboratory
• Proceedings of the 57th Applied Physics Society Academic Conference (Fall 1996): 8p-W-17

16.Characterization of Organic SOG Films After Electron Beam Curing

• Dong-Kyu Choi, J. Kennedy, L. Forster, Tadashi Nakano
• Allied Signal AMM
• Proceedings of the 57th Applied Physics Society Academic Conference (Fall 1996): 9p-H-17

17.Observation of Hydrogen Trapping in Ion-Implanted Defects Using TD-APIMS

• Shubun Yabu, Yoshiyuki Sato*, Kazuyuki Saito**
• NTT Advanced Technology Research Laboratories, *NTT LSI Research Laboratories, **University of Aizu
• Proceedings of the 57th Applied Physics Society Conference (Fall 1996): 9p-L-1

18. Void-Cut SOI via H+ Injection (2)

• Kakizaki, K. *, Kibana, T.*, Oshima, S.*, Kitamura, T.*, Hara, T.*
• Hosei University, Faculty of Engineering
• Proceedings of the 57th Applied Physics Society Academic Conference (Fall 1996): 9p-P-2

19.Characteristics of SiOF Films Deposited by Bias ECR-CVD Using SiH4/CF4 Gas

• Tatsuya Usami, Taku Ishikawa, Tetsuya Honma
• NEC ULSI Device Development Laboratories
• Proceedings of the 43rd Applied Physics Related Union Conference (Spring 1996): 26a-N-10

20. Evaluation of Low-Dielectric-Constant PTFE Thin Films

• Toshiaki Hasegawa, Nobuyuki Matsuzawa*, Shingo Kadomura, Junichi Aoyama
• Sony Corporation, Ultra-LSI Research Laboratory, *Central Research Laboratories
• Proceedings of the 43rd Applied Physics Related Union Conference (Spring 1996): 26a-N-2

21.Evaluation of the Dielectric Constant of Hydrogen Silsesquioxane (HSQ)

• Takashi Miyanaga, Naoto Sasaki, Katsuya Kameoka, Ichiro Moriyama, Masayoshi Sasaki
• Sony Corporation, Semiconductor Company, First LSI Division
• Proceedings of the 43rd Applied Physics Related Joint Conference (Spring 1996): 26a-N-6

22. Modification of Organic SOG Films Using Ion Implantation (V)

• Hiroyuki Watanabe, Masaki Hirase, Yoshiyuki Sanazawa, Hideki Mizuhara, Hiroyuki Aoe, Kazunobu Mameya
• Sanyo Electric Co., Ltd., Microelectronics Research Laboratory
• Proceedings of the 43rd Applied Physics Related Joint Conference (Spring 1996): 26a-N-7

23.Hydrogen-Induced Hot Carrier Lifetime Degradation Phenomenon in LPCVD-SiN Films

• Shunichi Tokifuji, Katsuhiko Shibusawa, Norio Murakami*, Eiji Uchida, Ryuji Nakamura*, Hiroshi Aoki*, Yuhiro Yamamoto*, Norio Hirasita
• Oki Electric Industry Co., Ltd., Ultra-LSI R&D Center, Process Technology Center
• Proceedings of the 43rd Applied Physics Related Joint Conference (Spring 1996): 27p-E-4

24. Adsorption Mechanism of Organic Additives Released from Plastic Boxes onto Wafer Surfaces

• Koichiro Saga, Sakuo Furutani, Takeshi Hattori
• Sony Corporation Semiconductor Company Ultra LSI Research Laboratory
• Proceedings of the 43rd Applied Physics Related Union Conference (Spring 1996): 27p-F-12

25. Mechanism of in-situ natural oxide film etching using anhydrous HF gas

• Koichi Muraoka, Iwao Kunishima, Nobuo Hayasaka, Shinichi Takagi, Akira Toriumi
• Toshiba Corporation ULSI Research Laboratory
• Proceedings of the 43rd Applied Physics Related Joint Conference (Spring 1996): 28a-K-3

26.Effect of Bias ECR CVD SiO₂ Film Emission Gas on the W Plug Process

• Yutaka Haga, Masakazu Muroyama, Masayoshi Sasaki
• Sony Corporation Semiconductor Company, First LSI Division
• Proceedings of the 43rd Applied Physics Related Joint Conference (Spring 1996): 29p-N-8

27.Formation of Low-Dielectric-Constant Insulating Films via Tetramethylthiophenol/Oxygen Radical Reaction

• Akiko Nara, Hitoshi Ito
• Toshiba Corporation ULSI Research Laboratory
• Proceedings of the 43rd Applied Physics Related Joint Conference (Spring 1996): 26a-N-1

28.Thermal desorption of oxygen adsorbed on graphite surfaces

• Iwao Yoshida, Toshio Sugita*, Mineo Noguchi*
• Tokyo University of Science, Faculty of Basic Science and Engineering, *Faculty of Engineering
• Proceedings of the 43rd Applied Physics Related Union Conference (Spring 1996): 26a-PA-12

29.Evaluation of Microcrystallization Processes in a-Si:H Film Structures (III)

• Goko Nakajima, Takafumi Oshima, Mitsuya Motohashi, Kazuaki Honma
• Tokyo Denki University, Faculty of Engineering
• Proceedings of the 43rd Applied Physics Related Joint Conference (Spring 1996): 26a-TC-10

30.Investigation of Moisture Absorption in SiOF Films

• Rika Shinohara, Hiroshi Kudo, Shunsaku Takeishi, Masao Yamada
• Fujitsu Ltd., Process Development Department
• Proceedings of the 43rd Applied Physics Related Joint Conference (Spring 1996): 26p-N-12

31.Desorption of SiO from oxygen-ion-implanted Si substrates

• Yukari Ishikawa, Noriyoshi Shibata
• Fine Ceramics Center
• Proceedings of the 43rd Applied Physics Related Union Conference (Spring 1996): 27p-P-9

32.Vacuum Characterization of Pure Titanium by Thermal Desorption

• Shuji Akiya, Teiichi Honma
• Chiba Institute of Technology
• Proceedings of the 43rd Applied Physics Related Joint Conference (Spring 1996): 28p-ZL-3

1995: Papers, Journals, Books

1.The distribution of activation energy for hydrogen desorption over silica-supported nickel catalysts determined from temperature-programmed desorption spectra

• Masahiko Arai, Yoshiyuki Nishiyama, ＊Takao Masuda, ＊Kenji Hashimoto
• Institute for Chemical Reaction Science, Tohoku University, ＊Department of Chemical Engineering, Kyoto University
• Appl. Surf. Sci., 89, 11 (1995)

2.Application of Thermal Desorption Analysis to Silicon Surface Evaluation

• Masakuni Yabu
• NTT Advanced Technology
• Surface Technology, 46, 47 (1995)

3.X-Ray Photoelectron Spectroscopic Studies on Pyrolysis of Plasma-Polymerized Fluorocarbon Films on Si

• Ken FUJITA, Yasuhiro MIYAKAWA and Norio HIRASHITA
• VLSI Research and Development Center, Oki Electric Industry Co.,Ltd.
• Jpn. J. Appl. Phys., 34, 304 (1995)

4. Studies of Corrosive Outgasses from Via Holes Using Thermal Desorption Spectroscopy

• S.Tokitoh, H.Uchida, H.Uchida*, Y.Okuno, K.Fushimi*, G.Liu, Y.Sakaya*, N.Hirashita
• VLSI Research and Development Center, Oki Electric Industry Co.,Ltd., *Process Technology Center, Oki Electric Industry Co.,Ltd
• Jpn. J. Appl. Phys., 34, 1021 (1995)

5. Reaction Studies between Fluorocarbon Films and Si using Temperature-Programmed X-ray Photoelectron and Desorption Spectroscopies

• N. Hirashita, Y. Miyakawa, K. Fujita, and J. Kanamori
• VLSI Research and Development Center, Oki Electric Industry Co., Ltd.
• Jpn. J. Appl. Phys., 34, 2137 (1995)

6. Direct analysis of contamination in submicron contact holes by thermal desorption spectroscopy

• Hidemitsu Aoki, Yuden Teraoka*, Eiji Ikawa, Takamaro Kikkawa and Iwao Nishiyama*
• ULSI Device Development Labs. NEC Corporation, *Microelectronics Research Labs. NEC Corporation
• J. Vac. Sci. Technol. A, 13, 42 (1995)

7. Analysis and Evaluation Technology for Silicon Wafer Surfaces: Analysis and Evaluation Technology for Adsorbed Molecules on Wafers

• Shubun Yabu
• NTT Advanced Technology
• Silicon Wafer Surface Cleaning Technology Supplement, Realize Inc., p.101

1995: Society's Mission Statement

1. Evaluation of SiOF Film Quality via Helicon Wave Plasma CVD

• Yutaka Haga, Masakazu Muroyama, Masayoshi Sasaki
• Sony Corporation, Semiconductor Company, First LSI Division
• Proceedings of the 56th Applied Physics Society Academic Conference (Fall 1995): 26a-ZB-3

2. Effect of Moisture Absorption on Low-Dielectric-Constant Surface Protective Films

• Etsushi Adachi, Hiroshi Adachi, Hirotaka Muto, Haruhisa Fujii
• Mitsubishi Electric Corporation, Central Research Laboratory
• Proceedings of the 56th Applied Physics Society Academic Conference (Fall 1995): 26a-ZB-6

3. Investigation of the Mechanism Suppressing Water Vapor Permeation in Plasma-Oxidized Films

• Hiroaki Uchida, Shunichi Tokifuji*, Yoshihiro Sakatani, Norio Hirasita*
• Oki Electric Industry Co., Ltd. Process Technology Center, *Ultra-LSI R&D Center
• Proceedings of the 56th Applied Physics Society Academic Conference (Fall 1995): 26a-ZB-9

4. Characteristics of CVD-BST Films Near the Electrode Interface

• Mikio Yamamukai, Takaaki Kawahara, Takumi Nakahata, Akimasa Yuki, Koichi Ono
• Mitsubishi Electric Corporation, Semiconductor Research Laboratory
• Proceedings of the 56th Applied Physics Society Academic Conference (Fall 1995): 26a-ZG-7

5. Formation and Interface Control of High-Dielectric-Constant (Ba, Sr)TiO3 Films

• Akimasa Yuki
• Mitsubishi Electric Corporation, Semiconductor Research Laboratory
• Proceedings of the 56th Applied Physics Society Academic Conference (Fall 1995): 26p-W-6

6. Chlorine Content and Film Quality of CVD TiN Films Using TiCl4

• Atsushi Kawashima, Takaaki Miyamoto, Shingo Kadomura, Junichi Aoyama
• Sony Corporation, Semiconductor Company, Ultra-LSI Research Laboratory
• Proceedings of the 56th Applied Physics Society Academic Conference (Fall 1995): 27a-PB-8

7.Evaluation of High-Temperature O3-TEOS NSG Film

• Haruhiko Ajisawa, Masaki Saito, Ichiro Moriyama, Masayoshi Sasaki
• Sony Corporation, Semiconductor Company, First LSI Division
• Proceedings of the 56th Applied Physics Society Academic Conference (Fall 1995): 28a-PC-11

8. Properties of Hydrogenated Silsesquioxane SOG as an Interlayer Insulation Film

• Kenichi Koyanagi, Koji Kishimoto, Tetsuya Honma
• NEC Corporation, ULSI Device Development Laboratory
• Proceedings of the 56th Applied Physics Society Academic Conference (Fall 1995): 28a-PC-2

9. Modification of Organic SOG Films Using Ion Implantation (IV)

• Hiroyuki Watanabe, Seiki Hirase, Yoshiyuki Sanazawa, Hideki Mizuhara, Hiroyuki Aoe
• Sanyo Electric Co., Ltd. Microelectronics Research Laboratory
• Proceedings of the 56th Applied Physics Society Conference (Fall 1995): 28a-PC-4

10.Structural Changes in Amorphous ITO Films Formed by H₂O-Added Sputtering Following Heat Treatment

• Etsuko Nishimura, Masahiko Ando, Kenichi Onizawa, Tetsuro Minemura, Masaru Takahata*
• Hitachi, Ltd., Hitachi Research Institute, *Electronic Devices Division
• Proceedings of the 56th Applied Physics Society Conference (Fall 1995): 28a-ZH-8

11.Reduced Moisture Absorption in SiOF Films via Density Control

• Hiroshi Kudo, Naoki Awaji*, Rika Shinozaki, Shunsaku Takeishi, Masataka Hoshino, Masao Yamada
• Fujitsu Ltd., Process Development Department, *ULSI Research Department
• Proceedings of the 56th Applied Physics Society Academic Conference (Fall 1995): 26a-ZB-10

12.TDS Evaluation of Electrode Materials for High-Dielectric-Constant Applications

• Yutaka Ashida, Masaaki Nakabayashi, Takaaki Kijimura, Haruhisa Mori
• Fujitsu Ltd.
• Proceedings of the 56th Applied Physics Society Academic Conference (Fall 1995): 26a-ZG-1

13.Analysis of Hydrogen Ion Implantation Defects Using the TDS Method

• Kazuyuki Saito, Yoshiyuki Sato*, Yoshikazu Honma**, Shuho Yabu**
• University of Aizu, *NTT LSI Research Laboratories, **NTT Advanced Technology Laboratories
• Proceedings of the 56th Applied Physics Society Academic Conference (Fall 1995): 26p-ZP-9

14.Effect of Hydrogen in Passivation Films on Silicon Dangling Bonds

• Kumi Terada, Hiroshi Kurokawa, Junji Kobayashi, Hiroaki Kono*, Kazuo Kobayashi**, Tetsuo Shokabu
• Mitsubishi Electric Corp., Materials Research Laboratory, *Kita-Itami Works, **Kumamoto Works
• Proceedings of the 56th Annual Meeting of the Applied Physics Society (Fall 1995): 26p-ZV-15

15. Al selective CVD reaction on Si induced by surface hydrogen desorption

• Yoshihiko Katsuta, Shinobu Kogoroda, Hiroyuki Sakagami, Shozo Shingu, Takayuki Takahagi
• Faculty of Engineering, Hiroshima University
• Proceedings of the 56th Applied Physics Society Conference (Fall 1995): 26p-ZV-8

16. Quantitative Analysis of Ar in SiO₂ Films Using TDS and SIMS

• Kazuyoshi Tsukamoto, Toshiyuki Matsunaga, Keiichi Watanabe, Hirohiro Morita, Hitoshi Yamanishi*, Yoshiaki Yoshioka
• Semiconductor Analysis Group, Technical Department, Matsushita Techno Research Co., Ltd., *Thin Film Processing Research Laboratory, Production Engineering Division, Matsushita Electric Industrial Co., Ltd.
• Proceedings of the 56th Applied Physics Society Conference (Fall 1995): 27a-C-3

17. Ar+-IBARD Method-Deposited TiOX Thin Films: Ar-Temperature-Dependent Desorption Characteristics

• Masato Sasase, Takahiro Yamaki*, Kiyoshi Miyake**, Ichiro Takano, Shoji Isobe
• Faculty of Engineering, Kogakuin University; *Hitachi, Ltd., Hitachi Research Laboratory; **Hitachi, Ltd., Electric Development Division
• Proceedings of the 56th Applied Physics Society Conference (Fall 1995): 27p-ZH-9

18.Adsorption and Desorption of Sodium on Hydrogen-Terminated Si(100)2×1 Surfaces and Electronic States (I)

• Norihiro Fujimoto, Kaoru Kojima, Shozo Hongo, Toshio Urano
• Faculty of Engineering, Kobe University
• Proceedings of the 56th Applied Physics Society Academic Conference (Fall 1995): 27p-ZL-2

19.Effect of Alcohol Addition on TEOS/O3 Atmospheric Pressure CVD Reaction (IV) - Addition to Tetramethoxysilane Feedstock -

• Koichi Ikeda, Masahiko Maeda
• NTT LSI Laboratories
• Proceedings of the 56th Applied Physics Society Conference (Fall 1995): 28a-PC-9

20. Reduction of Leakage Current in Ta₂O₅ Thin Films via Oxygen Radical Annealing

• Yuichi Matsui, Kazunori Torii, Toshihiko Itoga, Shinpei Iijima*, Yuzuru Oji*
• Hitachi Central Research Laboratory, *Hitachi Semiconductor Engineering
• Proceedings of the 56th Applied Physics Society Conference (Fall 1995): 28p-PC-3

21.Evaluation of Bonded Wafers Using TDS - Contribution from the Wafer Back Side -

• Ryoko Takada, Chizuko Okada, Hideyuki Kondo, Jiro Tatsuta, Hisashi Furuyo, Takayuki Shinyouchi
• Mitsubishi Materials Silicon Corporation, Central Research Laboratory
• Proceedings of the 42nd Applied Physics Related Joint Conference (Spring 1995): 28a-X-2

22.Evaluation of Bonded Wafers Using TDS II: Contribution from the Bond Interface

• Chizuko Okada, Ryoko Takada, Hideyuki Kondo, Jiro Tatsuta, Hisashi Furuyo, Takayuki Shinyouchi
• Mitsubishi Materials Silicon Corporation Central Research Laboratory
• Proceedings of the 42nd Applied Physics Related Joint Conference (Spring 1995): 28a-X-3

23.Fluorine and Chlorine Content in DCS-WSiX Membranes and TDS Analysis

• Osamu Yamazaki, Nobuyuki Ominami, Makoto Tanigawa, Katsuji Iguchi, Keizo Sakiyama
• Sharp Corporation, Super LSI Development Laboratory
• Proceedings of the 42nd Applied Physics Related Joint Conference (Spring 1995): 29a-K-8

24. Modification of Organic SOG Films Using Ion Implantation (II)

• Hiroyuki Watanabe, Seiki Hirase, Yoshiyuki Sanemizawa, Hideki Mizuhara, Hiroyuki Aoe
• Sanyo Electric Co., Ltd. Microelectronics Research Laboratory
• Proceedings of the 42nd Applied Physics Related Union Conference (Spring 1995): 30a-C-1

25.Thermal Changes in Stress, Structure, and Composition of TEOS-O3 Deposited Films

• Kaori Umezawa, Norihiko Tsuchiya, Muneo Yabuki, Osamu Fujii*, Hirofumi Omori*, Meiji Matsumoto*
• (Toshiba Corporation, Semiconductor Business Division, *Toshiba Corporation, Research and Development Center)
• Proceedings of the 42nd Applied Physics Related Joint Conference (Spring 1995): 30a-C-10

26. Interlayer Insulation Film Formation Process Using SiH4-H2O2 System CVD Oxide Films (2)

• Masazumi Matsuura, Tsuneyuki Nishimura*, Yoshio Hayashide, Makoto Hirayama, Takaaki Iuchi*
• Mitsubishi Electric Corporation ULSI Development Laboratory, *Ryo-Den Semiconductor Co., Ltd.
• Proceedings of the 42nd Applied Physics Related Joint Conference (Spring 1995): 30a-C-4

27. Planarization Using Polycarbosilane

• Rinko Kobayashi, Shunichi Fukuyama, Yoshihiro Nakata
• Fujitsu Laboratories Ltd.
• Proceedings of the 42nd Applied Physics Related Union Conference (Spring 1995): 30a-C-6

28. Oxidation Promotion of Perhydrosilazane by Phenol Compounds

• Yoshihiro Nakata, Shunichi Fukuyama, Rinko Kobayashi, Hideki Harada*, Yoshiyuki Okura*
• Fujitsu Laboratories Ltd., *Fujitsu Limited
• Proceedings of the 42nd Applied Physics Related Joint Conference (Spring 1995): 30a-C-7

29. Analysis of Hydrogen Desorption Behavior from Hydrogen-Doped Si Substrates Using TDS

• Haruki Okumura, Takehiro Hasegawa, Fusae Soeda
• Toray Research Center
• Proceedings of the 42nd Applied Physics Related Joint Conference (Spring 1995): 30a-H-1

30. RF Frequency Dependence of Plasma CVD-SiO₂ Film Properties

• Hiroyuki Kono, Kenya Iwasaki
• Oki Electric Industry Co., Ltd.
• Proceedings of the 42nd Applied Physics Related Joint Conference (Spring 1995): 30p-C-13

31. Detection of Ion-Implanted Impurities (B, P, As) Using TDS

• Shubun Yabu, Yoshikazu Honma, Yoshiyuki Sato*, Kazuyuki Saito**
• NTT Advanced Communication Laboratories, *NTT LSI Research Laboratories, **University of Aizu
• Proceedings of the 42nd Applied Physics Related Joint Conference (Spring 1995): 28a-X-1

32. Evaluation of Organic Molecule Behavior on Glass Substrates Using Thermal Desorption

• Yoshikazu Takahashi, Sakae Inayoshi, Kazuya Saito, Sonoko Tsukahara, Masayuki Iijima
• Japan Vacuum Technology Inc., Tsukuba Advanced Materials Research Laboratory
• Proceedings of the 42nd Applied Physics Related Joint Conference (Spring 1995): 28a-ZS-4

33. Chemical Composition of Organic Contaminants on Si Wafer Surfaces

• Takayuki Takahagi, Akihiro Kojima, Hiroyuki Sakagami, Shōzō Shingūhara, Hiroshi Yashima*
• Faculty of Engineering, Hiroshima University; Toray Research Center
• Proceedings of the 42nd Applied Physics Related Joint Conference (Spring 1995): 29a-PA-14

34. Evaluation of GaAs Surface After Phosphoric Acid Treatment

• Eiji Hayashi, Naoto Nagai, Yoshitsugu Nakagawa, Yoichi Nakayama, Fusami Soeda
• Toray Research Center
• Proceedings of the 42nd Applied Physics Related Joint Conference (Spring 1995): 29a-ZN-2

35. Evaluation of Chlorine Degassing Characteristics from CVD-TiN Films

• Toshiya Suzuki, Takuya Sakai*, Takayuki Oba, Haruyoshi Yagi
• Fujitsu Ltd., *Fujitsu VLSI Ltd.
• Proceedings of the 42nd Applied Physics Related Joint Conference (Spring 1995): 29p-K-3

36. Adsorption of IPA on HF-Treated Si Surfaces II

• Noriyuki Miyata, Hidehiro Kojiri*, Yoshimi Yamashita, Shigeru Okamura, Tokushige Hisatsugu
• (Fujitsu Laboratories Ltd., *Fujitsu Limited)
• Proceedings of the 42nd Applied Physics Related Joint Conference (Spring 1995): 29p-PA-20

1994: Papers, Journals, Books

1.Thermal Desorption Spectroscopy and X-Ray Photoelectron Spectroscopy Study of CFx Layer Deposited on Si and SiO₂

• Yasuhiro Miyakawa, Ken Fujita, Norio Hirashita, Naokatsu Ikegami, Jun Hashimoto, Takayuki Matsui and Jun Kanamori
• VLSI R&D Center, Oki Electric Industry CO., Ltd.
• Jpn. J. Appl. Phys., 65, 7047 (1994)

2. In situ infrared study of chemical state of Si surface in etching solution

• Michio Niwano, Yasuo Kimura, and Nobuo Miyamoto
• Research Institute of Electrical Communication, Tohoku University
• Appl. Phys. Lett., 65(13), 1692 (1994)

3. Quantitative Analysis of Outgassing from Semiconductor Integrated Circuit Materials Using Thermal Desorption Gas Analysis

• Michio Niwano, Yasuo Kimura*
• Oki Electric Industry Co., Ltd. Super LSI Research and Development Center, *Electron Science Co., Ltd.
• Analytical Chemistry, 43, 757 (1994)

4.Reaction studies between Fluorocarbon Films and Si using Temperature-Programmed X-ray Photoelectron and Desorption Spectroscopies

• Norio HIRASHITA, Yasuhiro MIYAKAWA, Ken FUJITA and Jun KANAMORI
• VLSI Research and Development Center, Oki Electric Industry Co.,Ltd.
• DRY PROCESSS SYMPOSIUM,181(1994)

5.The impact of intermetal dielectric layer and high temperature bake test on the reliability of nonvolatile memory devices

• E.Sakagami, N.Arai*, H.Tsunoda**, H.Egawa**, Y.Yamaguchi, E.Kamiya, M.Takebuchi***, K.Yamada***, K.Yoshikawa and S.Mori
• Semiconductor Device Engineering Laborattory, TOSHIBA Corp., *TOSHIBA Microelectronics Corp., **Integrated Circuit Advanced Prosess Department, TOSHIBA Corp., ***Logic Device Engineering Department, TOSHIBA Corp.
• IEEE/IRPS(1994)

6.Infrared spectroscopy study of initial stages of oxidation of hydrogen-terminated Si surfaces stored in air

• Michio Niwano, Jun-ichi Kageyama, Kazunari Kurita, Koji Kinashi, Isao Takahashi and Nobuo Miyamoto
• Research Institute of Electrical Communication, Tohoku University
• J.Appl.Phys.,76,2157(1994)

7.Ultraviolet-Induced Deposition of SiO₂ Film from Tetraethoxysilane Spin-Coated on Si

• Michio Niwano, Koji Kinashi, Kazuhiko Saito and Nobuo Miyamoto
• Research Institute of Electrical Communication, Tohoku University
• J.Electrochem.Soc.,141,1556(1994)

8. Surface contamination by organic matter

• Takayuki Takahagi
• Toray Research and Development Center, Inc.
• Journal of the Japan Air Purification Association, 7, 32 (1994)

9. Precision Circuit Hole Etching Technology in Magnetron Microwave Plasma

• Hiroshi Miyakawa, Atsushi Hashimoto, Naoki Ikegami, Tetsuya Matsui, Atsushi Kanamori
• VLSI R&D Center, Oki Electric Industry Co., Ltd.
• Journal of the Applied Physics Society of Japan, Vol. 33, p. 2145 (1994)

10. Thermal Desorption Spectroscopy for Hydrogen Concentration in Austenitic Stainless Steel

• Masako Mizuno, Hideya Anzai, Takashi Aoyama, Takaya Suzuki
• Hitachi, Ltd. Hitachi Research Laboratory
• Journal of the Institute of Materials, Vol. 35, p. 703 (1994)

11. Desorption Gas Analysis Using TDS Technology—Focusing on Electronic Material Applications—

• Haruki Okumura, Takayuki Takahagi
• Toray Research and Development Center, Inc., Surface Science Research Department
• TRC Communications, Vol. 30, p. 49 (1994)

1994: Conference Abstracts

1. Thermal Desorption Spectroscopy Study of Volatile Gases Corrosive to Via Holes

• Makoto Tokifuji, Hiroshi Uchida, Hiroshi Uchida*, Hiroshi Okuno*, Ken Fushimi*, Gang Liu, Hiroshi Sakatani*, Naoki Hirasita
• Research Center for Ultra-Large Scale Integrated Circuits, *Process Technology Center
• Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, Yokohama, 1994, pp. 925-927

2. Characterization of Chemical Vapor Deposited (Ba, St)TiO₃ Films Using Thermal Desorption Spectroscopy

• Motoo Yamamukai, Takaaki Kawahara, Tetsuro Makita, Akimasa Yuki, Kazuhiko Ono, Yasushi Uehara*
• Mitsubishi Electric Corporation, Semiconductor Basic Research Laboratory, *Materials Device Research Laboratory
• Proceedings of the 55th Annual Meeting of the Applied Physics Society (1994 Autumn): 19p-M-5

3. Moisture Absorption Characteristics of PECVD SiO₂ Films (II)

• Takashi Usami, Kimiaki Shimokawa, Masaki Yoshimaru
• OKI Electric Industry Co., Ltd., Ultra-LSI Research and Development Center
• Proceedings of the 55th Applied Physics Society Academic Conference (Fall 1994): 20p-ZC-14

4. Film Formation Mechanism of Fully Hydrogenated Silane II

• Yoshiyuki Okura, Hideki Harada, Atsuo Shimizu, Kiyoshi Watanabe, Shunichi Fukuyama*, Akira Nakajima**, Miki Takahashi**, Michio Komatsu**
• Process Development Department, Fujitsu Ltd., *Fujitsu Laboratories Ltd., **Catalyst Chemical Industries, Ltd., Fine Chemical Research Institute
• Proceedings of the 55th Applied Physics Society Academic Conference (Fall 1994): 20p-ZC-7

5. Analysis of Photoresist Thermal Reaction Behavior Using Thermal Desorption Spectroscopy (TDS)

• Sakuma, T., Ikeda, A., Yoshinobu, T.*, Iwasaki, Y.*
• Asahi Kasei Corporation, *Osaka University, Institute of Scientific and Industrial Research
• Proceedings of the 55th Applied Physics Society Academic Lecture Meeting (Fall 1994): 22a-ZB-8

6. Evaluation of Atomic Planarity on Si(100) Surfaces Using Hydrogen Thermal Desorption Spectroscopy

• Hideki Nakazawa, Maki Suemitsu, Ki-Jun Kim, Nobuo Miyamoto
• Research Institute of Electrical Communication, Tohoku University
• Proceedings of the 55th Applied Physics Society Academic Conference (Fall 1994): 20a-ZB-5

7. Study on Iodine Fluoride Desorption and Hydrogen Adsorption on Silicon Surfaces

• Toru Kubota, Shuji Shiraishi, Yoji Saito
• Faculty of Engineering, Seikei University
• Proceedings of the 55th Applied Physics Society Academic Lecture Meeting (Fall 1994): 20p-ZB-10

8. Effect of Alcohol Addition on TEOS/O₃ Atmospheric Pressure CVD Reaction (III) - Addition of Deuterium-Substituted Alcohols -

• Koichi Ikeda, Satoshi Nakayama, Masahiko Maeda
• NTT LSI Laboratories
• Proceedings of the 55th Applied Physics Society Academic Lecture Meeting (Fall 1994): 20p-ZC-1

9. Effects of Plasma CVD Deposition Conditions on Parasitic MOS-Tr

• Hiroyuki Ota, Hitoshi Asada, Yukihiro Sato, Atsuo Shimizu, Kiyoshi Watanabe
• Fujitsu Ltd.
• Proceedings of the 55th Applied Physics Society Academic Lecture Meeting (Fall 1994): 20p-ZC-9

10. Water Absorption Characteristics of Thermally Oxidized Films

• Masaki Okuno, Yuji Kataoka, Hidehiro Koziri*, Yoshihiro Sugita, Satoru Watanabe, Kongo Takasaki
• Fujitsu Laboratories Ltd., Fujitsu Limited
• Proceedings of the 55th Applied Physics Society Academic Conference (Fall 1994): 21p-ZB-15

11. TDS Observation of Oxidized Films on Silicon (111) Surfaces

• Koji Watanabe, Fuminori Ito, Hiroyuki Hirayama
• NEC Microelectronics Laboratories
• Proceedings of the 55th Applied Physics Society Academic Conference (Fall 1994): 21p-ZB-16

12. TDS Analysis of Organic Contaminants on Silicon Surfaces

• Haruki Okumura, Takayuki Takahagi
• Toray Research Center
• Proceedings of the 41st Applied Physics Joint Conference (Spring 1994): 29a-ZK-11

13. Inorganic Baking Treatment of Organic SOGs

• Hideya Kojima, Susumu Okano, Naofumi Ohashi*, Hiroki Nezu*
• Tokyo Applied Chemical Industries Co., Ltd., Development Division, *Hitachi, Ltd., Equipment Development Center
• Proceedings of the 41st Joint Conference on Applied Physics (Spring 1994): 30p-ZW-13

14. Investigation of the Application of Poly(2-methyl-2-propyl-2-propyl-2-propyl-2-propyl-2-propyl-2-propyl-2-

• Etsushi Adachi, Hiroshi Adachi, Hiroyuki Nishimura, Shintaro Minami, Masazumi Matsuura*
• Mitsubishi Electric Corporation, Central Research Laboratory, *Ultra-Large Scale Integrated Circuit Development Laboratory
• Proceedings of the 41st Joint Conference on Applied Physics (Spring 1994): 30p-ZW-14

15. Desorption Behavior of NH3 in Multilayer Via Holes

• Shunichi Tokifuji, Eiji Uchida*, Yasuyuki Okuno*, Kimihisa Fushimi*, Yoshihiro Sakatani*, Norio Hirasita
• Oki Electric Industry Co., Ltd., Ultra-LSI Research and Development Center, *Process Technology Center
• Proceedings of the 41st Applied Physics Joint Conference (Spring 1994): 30p-ZW-15

16. Modification of O3-TEOS Insulating Film Properties

• Makoto Tanigawa, Tsukasa Doi, Akira Ishihama, Keizo Sakiyama
• Sharp Corporation, Super LSI Development Research Laboratory
• Proceedings of the 41st Applied Physics Related Joint Symposium (Spring 1994): 30p-ZW-2

17. Improvement of O3-TEOS Insulating Film Quality

• Hideya Kogane, Susumu Okano, Mitsuro Minato
• Tokyo Applied Chemical Industries Co., Ltd., Development Division
• Proceedings of the 41st Applied Physics Related Joint Conference (Spring 1994): 30p-ZW-3

18. Moisture Absorption Characteristics of PECVD SiO₂ Films

• Takashi Usami, Kimiaki Shimokawa, Masaki Yoshimaru
• Oki Electric Industry Co., Ltd., Ultra-LSI Research and Development Center
• Proceedings of the 41st Joint Conference on Applied Physics (Spring 1994): 30p-ZW-8

19. Improving TEOS/O₃ SiO₂ Film Embedding by Controlling Chemical Species in Residual Substrate Films

• Kubo, T., Hirose, K., Honma, T., Murao, Y.
• NEC Large Scale Integrated Circuit Device Development Laboratories
• Proceedings of the 41st Joint Conference on Applied Physics (Spring 1994): 30p-ZW-4

20. Influence of Substrate on Needle Crystal Formation in Electroless Copper Plating

• Tomoyuki Fujinami, Ikako Yokoi, Hideo Honma*
• Ebara Corporation, *Kanto Gakuin University Faculty of Engineering
• Abstracts of the 90th Annual Meeting of the Surface Technology Association, 168, (1994): 5C-19

1993: Papers, Journals, Books

1. Accelerated Thermal Carrier Degradation Due to Water Content in TEOS/O3 Oxides and Water-Repellent Barrier Properties of ECR-SiO2 Films

• N. Shimoyama, K. Machida, J. Takahashi, K. Murase, K. Minegishi, and T. Tsuchiya
• NTT LSI Laboratories
• IEEE Transactions on Electronic Devices, 40, 1682 (1993)

2. Thermal Desorption Study of Silicon Dioxide Deposited by Atmospheric Pressure Chemical Vapor Deposition Using Tetraethoxysilane and Ozone

• Katsumi Murase, Norikuni Yabumoto*, Yukio Minegishi
• NTT LSI Laboratories, *NTT Interdisciplinary Research Laboratories
• Journal of the Electrochemical Society, Vol. 140, p. 1722 (1993)

3. Effect of Plasma Curing Temperature on Spin-Coated Glass

• Hideo Minamizu and Kazunari Minegishi
• NTT LSI Laboratories
• Journal of the Electrochemical Society, Vol. 140, p. 1121 (1993)

4. Growth of Natural Oxide Layer and Organic Deposition on Bare Silicon Wafers in Air

• Chizuko Okada, Hiroyuki Kobayashi, Isao Takahashi, Jiro Tatsuta, Takayuki Shinyoji
• Mitsubishi Materials Central Research Laboratories
• Journal of Applied Physics, 32, 1031 (1993)

5. Measurement of Organic Substances on Silicon Wafers Using Thermal Desorption Spectroscopy

• Chizuko Okada, Isao Takahashi, Hiroyuki Kobayashi, Jiro Tatsuta, Takayuki Shinyoji
• Mitsubishi Materials Central Research Laboratory
• Transactions of the Japan Society for Applied Physics, 32, 1186 (1993)

6. Thermal Desorption and Infrared Spectroscopy Study of Plasma-Enhanced Chemical Vapor Deposition SiO Films Using Tetraethyl Orthosilicate

• Nobuo Hirakata, Makoto Tokifuji, Hiroshi Uchida
• VLSI Research and Development Center, Oki Electric Industry Co., Ltd.
• Journal of the Applied Physics Society of Japan, Vol. 32, p. 1787 (1993)

7. Direct Numerical Methods for Thermal Desorption Spectroscopy Analysis

• H. Froitzheim, P. Schenk, and G. Wedler
• Institute for Physics and Theoretical Chemistry, University of Erlangen-Nuremberg
• Vacuum Science and Technology A, 11, 345 (1993)

8. Moisture Uptake Process and Dehydration Mechanism of Chemical Vapor Deposited Oxide Films

• Shunichi Tokifuji, Eiji Uchida, Norio Hirasita
• OKI Electric Industry Co., Ltd., Ultra-LSI Research and Development Center
• Technical Report of IEICE., SDM93-9, 59 (1993)

9. Improvement of Water-Induced Immunity Degradation of Thermal Carriers Using Silicon Dioxide with Si-H Bonds via ECR Plasma

• Kazuo Machida, Nobuo Shimoyama, Jun Takahashi, Hiroshi Takahashi, Naoki Yabumoto, Hideo Arai*
• NTT LSI Laboratories, *NTT Cross-Domain Research Laboratories
• Technical Report of IEICE., SDM93-39, 47 (1993)

10. Moisture Absorption Characteristics of Plasma CVD-SiO₂ Films

• Kimiaki Shimokawa
• Oki Electric Industry Co., Ltd., Super LSI Development Research Center
• Monthly Semiconductor World (February 1993)

11. Issues Concerning the Moisture Absorption of Insulation Films—Evaluation Methods and Countermeasures

• Hideo Kotani, Masazumi Matsuura, Yoshio Hayashide
• Mitsubishi Electric Corporation, LSI Research Laboratory
• Monthly Semiconductor World (February 1993)

12. Effect of Low-Temperature Annealing on the Moisture Absorption of TEOS-O3 Atmospheric Pressure CVD NSG Films

• Yukio Hosoda, Hideki Harada, Atsuo Shimizu, Kiyoshi Watanabe, Yutaka Ashida
• Fujitsu, Fundamental Process Development Department, Development Promotion Headquarters
• Monthly Semiconductor World (February 1993)

1993: Conference Abstracts

1. Evaluation of Organic Contaminants on Si Wafer Surfaces Using a Thermal Desorption Analysis System

• Chizuko Okada
• Mitsubishi Materials Corporation, Central Research Laboratory
• Proceedings of the 54th Analytical Chemistry Symposium (June 1993)

2. Investigation of a Hydrogen Analysis Method for Stainless Steel Using Thermal Desorption

• Masako Mizuno, Yutaka Misawa, Jiro Kuniya, Toshitaka Kida
• Hitachi, Ltd., Hitachi Research Laboratory
• Proceedings of the 54th Analytical Chemistry Symposium (June 1993)

3. Single Step Gap Filling Technology for Subhalf Micron Metal Spacings on Plasma Enhanced TEOS/O2 Chemical Vapor Deposition System

• Katsuyuki MUSAKA, Shinsuke MIZUNO, Kiyoaki HARA
• Applied Materials Japan Inc. Technology Center
• Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials, Makuhari, 1993, pp.510-512

4. Thermal Desorption Spectroscopy of SC1 Oxide Films on Si(100) and (111) Surfaces

• Yutaka Iwasaki, Motoi Nakao, Tatsuo Yoshinobu, Taizo Uchiyama*
• Institute of Scientific and Industrial Research, Osaka University, *Electronics Science Ltd.
• Proceedings of the 54th Applied Physics Society Conference (Fall 1993)

5. Thermal Desorption Behavior of Hydrogen on Hydrogen-Terminated Si(111) Surfaces

• Takayuki Takahagi, Hirotaka Nagoya, Yoshitsugu Nakagawa, Naoto Nagai, Teru Ishitani
• Toray Research Center
• Proceedings of the 54th Applied Physics Society Conference (Fall 1993)

6. Evaluation of Al Films by TDS (Thermal Desorption Spectroscopy)

• Takeshi Harui, Hideki Ohno, Minoru Inoue
• Fujitsu Ltd.
• Proceedings of the 54th Applied Physics Society Conference (Fall 1993): 16a-ZR-11

7. Defect Precipitation in High-Concentration BPSG Films and Suppression Methods (3) - Effect of Silylation Treatment -

• Kosaku Yano, Yuka Terai, Tatsuo Sugiyama, Masataka Endo, Tetsuya Ueda, Noboru Nomura
• Matsushita Electric Industrial Co., Ltd. Research Center
• Proceedings of the 54th Applied Physics Society Conference (Fall 1993): 16p-ZQ-16

8. Thermal Desorption Gas Analysis (TDS) of Heat-Treated Plasma-CVD SiO Films

• Shunichi Tokifuji, Eiji Uchida, Norio Hirasita
• Oki Electric Industry Co., Ltd., Ultra-LSI Research and Development Center
• Proceedings of the 54th Applied Physics Society Conference (Fall 1993): 16p-ZQ-5

9. TEOS-O3 NSG Undercoat P-SiO Dependency

• Takashi Usami, Kimiaki Shimokawa, Masaki Yoshimaru
• Oki Electric Industry Co., Ltd. Ultra LSI Research and Development Center
• Proceedings of the 54th Applied Physics Society Academic Conference (Fall 1993): 16p-ZQ-7

10. High-Temperature Stress on Insulation Film

• Kazuhiro Hoshino, Yukiyasu Sugano
• Sony Corporation, Ultra-LSI Development Division
• Proceedings of the 54th Applied Physics Society Academic Conference (Fall 1993): 17p-ZQ-16

11. Study on Quantitative Degassing Analysis Using Thermal Desorption Gas Analysis

• Norio Hirage, Shunichi Tokifuji, Taizo Uchiyama*, Yasushi Hinaga*
• Oki Electric Industry Co., Ltd. Super LSI Research and Development Center, *Electronics Science Ltd.
• Proceedings of the 54th Applied Physics Society Academic Conference (Fall 1993): 27a-ZL-8

12. Study of Hydrogen on Si Surfaces Using the TDS Method

• Takayuki Takahagi, Hirotaka Nagoya, Yoshikatsu Nagasawa, Teru Ishitan
• Toray Research Center
• Proceedings of the 54th Applied Physics Society Conference (Fall 1993): 28a-ZD-7

13. Gas Release Characteristics of Via Holes Coated with TiN/Ti Films

• Masazumi Matsuura, Sumio Yamaguchi, Yoshio Hayashide, Hideo Furuya
• Mitsubishi Electric Corporation, LSI Research Laboratory
• Proceedings of the 54th Applied Physics Society Conference (Fall 1993): 29a-X-1

14. Film Formation Mechanism of Perhydrosilazane

• Takashi Nagashima, Hideki Harada
• Fujitsu Ltd.
• Proceedings of the 54th Applied Physics Society Conference (Fall 1993): 29a-X-10

15. Evaluation of Off-Angle (111) Si Wafer Surfaces Using Thermal Desorption Analysis

• Jiro Tatsuta, Hiroyuki Kobayashi, Isao Takahashi, Takayuki Shinyouchi, Chizuko Okada*
• Mitsubishi Materials Central Research Laboratory, *Mitsubishi Materials Silicon
• Proceedings of the 54th Applied Physics Society Academic Conference (Fall 1993): 29a-ZD-10

16. Evaluation of Organic Materials on Si Wafer Surfaces Using Thermal Desorption Analysis

• Chizuko Okada, Etsuro Morita, Fumio Inoue, Jiro Tatsuta*, Takayuki Shinyouchi*
• Mitsubishi Materials Silicon, *Mitsubishi Materials Central Research Institute
• Proceedings of the 54th Applied Physics Society Conference (Fall 1993): 29a-ZD-11

17. TDS Observation of the Natural Oxide Film on the Bottom Si Surface of Contact Holes

• Masaharu Nakamori, Yuden Teraoka*, Nahomi Aoto, Hidemitsu Aoki, Iwao Nishiyama*, Eiji Igawa, Kimimaro Yoshikawa
• NEC Corporation, Microelectronics Research Laboratories, *Optical Electronics Research Laboratories
• Proceedings of the 54th Applied Physics Society Conference (Fall 1993): 17p-ZP-8

1992: Papers, Journals, Books

1.Thermal Desorption Studies of Phosphorus-Doped Spin-on-Glass Films

• Norio Hirashita, Masayuki Kobayakawa, Akira Arimatsu, Fumitaka Yokoyama, and Tsuneo Ajioka
• Oki Electric Industry Co.,Ltd.
• J.Electrochem.Soc.,139,794(1992)

2.Mechanisms of Surface Reaction in Fluorocarbon Dry Etching of Silicon Dioxide - An Effect of Thermal Excitation

• N.Ikegami, N.Ozawa, Y.Miyakawa, N.Hirashita and J.Kanamori
• VLSI R＆D Center, Electronic Devices Group, OKI Electric Industry Co.,Ltd.
• Jpn.J.Appl.Phys.,31,2020(1992)

3.Thermal decomposition of ultrathin oxide layers on Si(100)

• Y.K.Sun, D.J.Bonser and Thomas Engel
• Department of Chemistry BG-10. University of Washington
• J.Vac.Sci.Technol.A,10,2314(1992)

4.Preoxidation Si cleaning and its impact on metal oxide semiconductor characteristics

• S.R.Kasi and M.Liehr
• IBM Research Division, Thomas J.Watson Research Center
• J.Vac.Sci.Technol.A,10,795(1992)

5. Analytical Methods for Gases in Silica Glass

• Yukihiro Morimoto
• Ushiku Electric Co., Ltd. Technical Research Institute
• New Ceramics, 9, 65(1992)

6. Thermal Carrier Resistance Degradation in Formaldehyde-Ethoxylated/Ozone-Oxidized Films Caused by Moisture and Methods for Suppressing Degradation Using ECR-SiO₂ Films

• Shimoyama Nobuhiro, Takahashi Junichi, Machida Katsuyuki, Murase Katsumi, Minegishi Kazushige*, Tsuchiya Toshiaki
• NTT LSI Laboratories, *NTT Electronics Technology Corporation
• Journal of Information Science and Technology TECHNICAL REPORT OF IEICE.,SDM92-33,51(1992)

7. Suppressing MOSFET Reliability Degradation Using Plasma-CVD Silicon Dioxide Films

• Koumei Shimokawa, Takashi Usami, Shunichi Tokifuji, Norio Hirasita, Masaki Yoshimaru
• Oki Electric Industry Co., Ltd. VLSI Research and Development Center
• Technical Report of IEICE, SDM92-133, Vol. 89 (1992)

8. Surface Adsorption Molecular Analysis Technology: Application of Temperature-Controlled Desorption Spectroscopy in Ultra-Large Scale Integrated Circuits

• Yutaka Iwasaki
• Institute of Scientific and Industrial Research, Osaka University
• Realize Corporation Breakthrough Seminar Materials No. 2, Establishing Analytical Evaluation Techniques for ULSI Manufacturing - Application of Cutting-Edge Analytical Evaluation Techniques on the Production Line - (November 1992)